Nanoscale studies of defect-mediated polarization switching dynamics in ferroelectric thin film capacitors

Yang, Sang Mo; Yoon, Jong‐Gul; Noh, Tae Won

doi:10.1016/j.cap.2011.05.017

Cited by 64 publications

(33 citation statements)

References 127 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The switching in an area is considered to be triggered by an act of the reverse domain nucleation and the switching kinetics is described in terms of the distribution function of the nucleation probabilities in these areas. Here, the coercive field values are within the range ∼ 400 − 900 V/cm, much less than that predicted by Landau mean field theory 43 , presumably indicating a switching mechanism which is inhomogeneous and nucleation mediated 44 . We have fitted the time dependent switching polarization curves in Fig.…”

Section: Switching Kinetics Of Remanent Electric Polarizationcontrasting

confidence: 55%

Anomalous ferroelectric switching dynamics in single crystalline SrTiO3

Shukla

Mukhopadhyay

2016

Journal of Applied Physics

View full text Add to dashboard Cite

Pure SrTiO 3 in bulk form is known to be an 'incipient ferroelectric' where quantum fluctuations of lattice positions prevent long range ferroelectric ordering at finite temperature. We show evidence and identify the origin of ferroelectric relaxation up to nearly room temperature in single crystalline SrT iO 3 . Strikingly, the origin of the observed ferroelectric switching is intrinsic that is coherent switching of surface nanopolar regions and not due to the nucleation and growth of domains, as described by Kolmogorov-Avrami-Ishibashi (KAI) Model.

show abstract

Section: Switching Kinetics Of Remanent Electric Polarizationcontrasting

confidence: 55%

Anomalous ferroelectric switching dynamics in single crystalline SrTiO3

Shukla

Mukhopadhyay

2016

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Recently, a revived interest has arisen in defect related phenomena in ferroelectric structures including domain wall dynamics and their interaction with defects and charges, [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] driven by the demand for sustained functionality in reduced dimensions. Surfaces can also be treated as a type of defect where the crystal periodicity terminates, sometimes along with a local field.…”

Section: Introductionmentioning

confidence: 99%

Very large dielectric response from ferroelectric nanocapacitor films due to collective surface and strain relaxation effects

Misirlioglu

Yıldız

2013

Journal of Applied Physics

View full text Add to dashboard Cite

Dependence of the dielectric response of ferroelectrics on defect types, particularly those with long range strain fields in confined geometries have been often mentioned, especially in interpreting experimental results in films. However, detailed discussions on the mechanisms with which defects alter properties, particularly in the presence of interfaces imposing certain boundary conditions, are seldom made. Here, we studied the thickness dependence of transition temperatures and dielectric response of Metal/BaTiO3/Metal ferroelectric nanocapacitor structures grown on SrTiO3 using a phenomenological approach accounting for the equations of electrostatics and semiconductors. Relaxation of the misfit strain via misfit dislocations amplify the surface effects in films below a critical thickness and favor electrical domains leading to very large dielectric responses in this regime. Thin film structures with relaxed misfit strain in this work are fully depleted in the presence of moderate densities of impurities ( $ 10 25 m À3 ). This is due to the reduction of polarization amplitude parallel to the film normal and its mplications for near-micron thick films are discussed. Consequently, the misfit dislocation sites have nearly no free carrier localization, making the role of these sites on leakage currents highly questionable. Dielectric response of intrinsic thicker films ( > 40 nm) is mostly under the influence of strain relaxation only with minimal interface impact in the limit of ideal electrodes. Our results point out that control of the dislocation density can lead to non-conventional functionalities in ferroelectric thin film capacitors via electromechanical coupling of properties to structure and domain stabilization. V C 2013 AIP Publishing LLC.

show abstract

“…Ferroelectric random-access memories (FRAM) [4], switches, capacitors [5], sensors, actuators and transducers are based on ferroelectric ceramic materials [6][7]. Zinc oxide (ZnO) based nanocomposite materials have been extensively studied due to their splendid properties and potential applications such as coatings, sensors, integrated components for telecommunication, solar cells, etc.…”

Section: Introductionmentioning

confidence: 99%

Electrical and non-linear optical studies on electrospun ZnO/BaO composite nanofibers

Vijayakumar¹,

Rathnakumari²,

Sureshkumar³

2012

Front. Mater. Sci.

View full text Add to dashboard Cite

Nanocapacitors and nonvolatile ferroelectric random access memories require nanoscale thin film coatings with ferroelectric properties. One dimensional ferroelectric nanofibers are used in ferroelectric memory devices owing to the fact that decrease of the dimensionality of the memory device elements will reduce the addressing and appreciably increase the storage capacity. Novel ZnO/BaO nanocomposite fibers exhibiting ferroelectric properties have been prepared in the form of non-woven mesh by electrospinning the sol derived from the sol-gel route. Thin cylindrical nanofibers of average diameter 100 nm have been obtained and their morphology is confirmed by SEM and AFM images. In the electrospinning process, the effect of the working distance on the fiber morphology was studied and it showed that working distance between 11 and 15 cm can produce fibers without beads and the decrease in working distance in this range increases the fiber diameter. Powder XRD was used to identify the phases and EDX analysis confirmed the presence of ZnO/BaO. Dielectric and non-linear optical properties have also been studied. The dielectric studies showed that ZnO/BaO composite nanofibers undergo a phase transition from ferroelectric to paraelectric at 323 K.

show abstract

Nanoscale studies of defect-mediated polarization switching dynamics in ferroelectric thin film capacitors

Cited by 64 publications

References 127 publications

Anomalous ferroelectric switching dynamics in single crystalline SrTiO3

Anomalous ferroelectric switching dynamics in single crystalline SrTiO3

Very large dielectric response from ferroelectric nanocapacitor films due to collective surface and strain relaxation effects

Electrical and non-linear optical studies on electrospun ZnO/BaO composite nanofibers

Contact Info

Product

Resources

About