Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors

Verma, Ram Mohan; Rao, Ashwath; Singh, Bhawna

doi:10.1063/1.4866655

Cited by 13 publications

(6 citation statements)

References 20 publications

(25 reference statements)

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“…Before 2000, numerous reports were focused on ferroelectricity in perovskites, such as LiNbO 3 , YMnO 3 , PbTiO 3 , and (Ba,Sr)TiO 3 . From 2000 onward, research on ferroelectric materials was intensive, primarily on SrBi 2 Ta 2 O 9 (SBT), − (Bi,La) 4 Ti 3 O 9 (BLT), − Pb(Zr,Ti)O 3 (PZT), − and so on due to their excellent fatigue and leakage characteristics. From the above, PZT emerged as a promising candidate due to its high P r and low crystallization temperature and was widely adopted in commercial 1T-1C FeRAM applications. , However, polycrystalline PZT or PZT with Pt electrodes suffers from fatigue (<10 8 cycles).…”

Section: Ferroelectric Materialsmentioning

confidence: 99%

Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

Khosla

Sharma

2021

ACS Appl. Electron. Mater.

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Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged as a cornerstone for a wide spectrum of semiconductor technology and electronic device applications, particularly in state-of-the-art complementary metal oxide semiconductor (CMOS) logic circuits and digital information storage media. Recent unprecedented advancements and future perspectives on integrating ferroelectric materials, particularly with high-κ dielectrics for electronic devices, are weighed. The emphasis is on (i) application (logic and memory); (ii) ferroelectric materials (organic, inorganic, and two-dimensional (2D)); (iii) device structures (metal/ferroelectric/metal (MFM), metal/ferroelectric/semiconductor (MFS), metal/ferroelectric/insulator/semiconductor (MFIS), and metal/ferroelectric/metal/insulator/semiconductor (MFMIS)); and (iv) next-generation electronic devices (negative capacitance field effect transistors (NC-FETs), ferroelectric RAM (FeRAM), ferroelectric field effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs)). In NCFETs, the ferroelectric layer serves as a negative capacitor so that the channel surface potential can be amplified more than the gate voltage. Hence, devices can overcome the “Boltzmann tyranny” and operate with a steep subthreshold swing < 60 mV/dec and supply voltage < 0.5 V. Thus, NC-FETs would be more suitable for high-speed logic operations, scalability, low-power, and cost-effectiveness, targeting applications such as 14T-type CPU registers and 6T-type cache static random access memory (SRAM). Ferroelectrics also opens a path to solving the problems associated with technology scaling due to the unique structural and electronic properties. Ferroelectric memories are anticipated to be in different flavors based on optimum performance, cost, and end-user requirements. Herein, we deliberate on the exciting possibilities for the development of device structures such as one-transistor one-capacitor (1T-1C)-type FeRAM with fast access time (<10 ns), high endurance (∼>1014 cycles), and moderate data retention being considered as a strong contender for volatile dynamic random access memory (DRAM), while, for nonvolatile memory applications, 1T-type ferroelectric gated transistors, called FeFETs with nondestructive readout, fast access time (∼<100 ns), moderate endurance (>109 cycles), and high retention time (>10 years) have the potential to compete with embedded solid-state drives (SSDs). Finally, the FTJs with three-dimensional cross-point architecture are strong contenders for high-density niche storage applications to interchange with low-cost per bit external hard disk drives. We conclude with a brief survey of recent ferroelectrics advances and potential futuristic comparisons for next-generation computing and storage device applications so the field may expand and pave the way for high-volume manufacturing of semiconductor technology down to the sub-5 nm node over the coming years.

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Section: Ferroelectric Materialsmentioning

confidence: 99%

Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

Khosla

Sharma

2021

ACS Appl. Electron. Mater.

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“…Amongst the various ferroelectric materials with general formula ABO 3 such as Pb[Zr x Ti 1−x ]O 3 (PZT), Bi 4 Ti 3 O 12 (BIT), SrBi 2 Nb 2 O 9 (SBN) and SrBiTa 2 O 9 (SBT), PZT has received considerable attention for their application as the gate material for MFeIS structure-based non-volatile memories [5][6][7][8][9][10]. PZT shows large data retention capabilities [11] than the bismuth-layered perovskite material, but the lead content, its diffusion in silicon and the fatigue results difficulty in its incorporation with silicon and hence, non-reliable [12,13].…”

Section: Introductionmentioning

confidence: 99%

On the structural and electrical properties of metal–ferroelectric–high k dielectric–silicon structure for non-volatile memory applications

et al. 2018

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In this article, we report the structural and electrical properties of metal-ferroelectric-high k dielectric-silicon (MFeIS) gate stack for non-volatile memory applications. Thin film of sputtered SrBi 2 Nb 2 O 9 (SBN) was used as ferroelectric material on 5-15 nm thick high-k dielectric (Al 2 O 3 ) buffer layer deposited using plasma-enhanced atomic layer deposition (PEALD). The effect of annealing on structural and electrical properties of SBN and Al 2 O 3 films was investigated in the temperature range of 350-1000 • C. X-ray diffraction results of the SBN and Al 2 O 3 show multiple phase changes with an increase in the annealing temperature. Multiple angle ellipsometry data show the change in the refractive index (n) of SBN film from 2.0941 to 2.1804 for non-annealed to samples annealed at 600 • C. For Al 2 O 3 film, n < 1.7 in the case of PEALD and n > 1.7 for sputtered film was observed. The leakage current density in MFeIS structure was observed to two orders of magnitude lower than metal/ferroelectric/silicon (MFeS) structures. Capacitance-voltage (C-V) characteristics for the voltage sweep of −10 to 10 V in dual mode show the maximum memory window of 1.977 V in MFeS structure, 2.88 V with sputtered Al 2 O 3 and 2.957 V with PEALD Al 2 O 3 in the MFeIS structures at the annealing temperature of 500 • C.

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“…Однако в настоящее время ни одна из исследуемых сегнетоэлектрических ячеек памя-ти не позволяет хранить информацию дольше, чем несколько дней, что далеко от требуемого разра-ботчиками вычислительной техники десятилетнего энергонезависимого хранения информации [2].…”

Section: Introductionunclassified

Ferroelectric Properties of Multilayer Thin Films of Barium Strontium Titanate and Layered Bismuth Titanate for Use in Nonvolatile Ferroelectric Memory

Анохин¹,

Biryukov²,

Golovko³

et al. 2018

Sc. South Russ.

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Аннотация. Одной из важнейших концепций использования сегнетоэлектрических гетерострук-тур в микроэлектронике является энергонезависимая память (FeRAM), где в качестве подзатворного диэлектрика в полевом транзисторе используется сегнетоэлектрическая пленка. Слоистые висмут-содержащие структуры, такие как Bi 4 Ti 3 O 12 , могут быть хорошим новым материалом для FeRAM, так как их объемное значение спонтанной поляризации составляет около 60 мкК/см 2 . В работе приведены результаты получения и исследования тонких пленок Bi 4 Ti 3 O 12 с различной ориентацией кристаллитов относительно плоскости подложки (100)Si с использованием в качестве подслоя Ba 0,4 Sr 0,6 TiO 3 . Установ-лено, что в зависимости от условий роста в гетероструктуре реализуются две преимущественные ори-ентации пленки относительно подложки. В эпитаксиальной пленке присутствуют только кристаллиты, у которых ось с перпендикулярна плоскости подложки. Вертикальная разориентировка, определенная по ширине на половине высоты кривой качания отражения (008), составляет примерно 5°. Значение параметра элементарной ячейки по нормали к подложке c = 3,280 нм, которое меньше, чем у объемного образца. Во втором типе пленок, которые имеют различную ориентацию кристаллитов относительно плоскости подложки, угол между осью a ячейки Bi 4 Ti 3 O 12 и нормалью к плоскости подложки составляет ~7° для (111)-ориентации, ~37,3° для (117)-ориентации, 0° для (100)-ориентации и ~45° для (110)-ори-ентации. В кристаллитах с вышеуказанными ориентациями присутствует отличная от нуля компонента поляризации вдоль нормали к подложке. Установлено, что в эпитаксиальных пленках возникают дву-мерные напряжения растяжения в плоскости подложки, которые приводят к моноклинному искаже-нию элементарной ячейки Bi 4 Ti 3 O 12 и существенному изменению колебаний КРС-мод связанных Ti 4+ -и TiO 6 -октаэдров.Ключевые слова: сегнетоэлектрическая пленка, эффект поля, структура, двумерные напряжения, двухслойные сегнетоэлектрики. Abstract. One of the most important concepts of the use of ferroelectric heterostructures in microelectronics is the non-volatile memory (FeRAM), where a ferroelectric film is used as a gate insulator in a field-effect transistor. Layered bismuth-containing structures, such as Bi 4 Ti 3 O 12 , can be a good new material for FeRAM, since its bulk value for spontaneous polarization is about 60 μK/cm 2 . In this paper, we report the results of obtaining and studying the epitaxial Bi 4 Ti 3 O 12 thin films on (100)Si using Ba 0.4 Sr 0.6 TiO 3 as a sublayer and also films with a different orientation of the crystallites relative to the plane of the substrate (100)Si. It is found 1 Южный научный центр Российской академии наук (Southern Scientific Centre, Russian Academy of Sciences, Rostov-on-Don, Russian Federation), Российская Федерация, 344006, г. Ростов-на-Дону, пр. Чехова, 41, FERROELECTRIC PROPERTIES OF MULTILAYER THIN FILMS OF BARIUM STRONTIUM TITANATE AND LAYERED BISMUTH TITANATE FOR USE IN NONVOLATILE

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Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors

Cited by 13 publications

References 20 publications

Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

On the structural and electrical properties of metal–ferroelectric–high k dielectric–silicon structure for non-volatile memory applications

Ferroelectric Properties of Multilayer Thin Films of Barium Strontium Titanate and Layered Bismuth Titanate for Use in Nonvolatile Ferroelectric Memory

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