Investigation of drain current RTS noise in small area silicon MOS transistors

Roux, O.; Dierickx, B.; Simoen, Eddy; Claeys, Cor; Ghibaudo, G.; Brini, J.

doi:10.1016/0167-9317(91)90281-h

Cited by 12 publications

(5 citation statements)

References 8 publications

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“…Thanks to the excellent sensitivity to localized phenomena, LFNM is particularly suitable for these kinds of applications [66][67][68]. In particular, this technique can be used to detect the various degradation stages, which usually precede the final failure of the device.…”

Section: Thin Oxide Breakdownmentioning

confidence: 99%

Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices

Ciofi

Neri

2000

J. Phys. D: Appl. Phys.

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The analysis of the degradation mechanisms that affect solid-state devices represents a key factor in the era of VLSI technology. This paper presents an overview of how the low-frequency noise measurement (LFNM) technique has been applied to the study of the most frequent causes of failure in integrated circuits and discrete components. After discussing noise and fluctuations in electron devices, we present some results obtained by applying LFNM to the analysis of some degradation mechanisms. Although several other causes of degradation are taken into consideration (ageing, radiation, hot electrons), the focus is on two specific failure mechanisms: electromigration in interconnect lines and ultra-thin oxide breakdown in MOS capacitors. Experience has highlighted the need for dedicated measurement systems, thus an entire section of the paper outlines both the instrumentation required and the reduction of the effects of spurious noise sources and external disturbances.

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Section: Thin Oxide Breakdownmentioning

confidence: 99%

Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices

Ciofi

Neri

2000

J. Phys. D: Appl. Phys.

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“…The drain current switching events between two or more distinct states, known as random telegraph signal (RTS) noise, become more pronounced and almost unavoidable for scaled transistor devices. Usually, such drain current behavior is attributed to the trapping/detrapping of the single-charge carrier, which is caused by a single interface trap or defect near the Si/SiO 2 interface. − In general, the RTS noise is considered an undesirable process, because it causes the dynamic variability of electric devices and particularly affects the reliability, productivity, and quality of scaled complementary metal-oxide semiconductor (CMOS) transistors. Therefore, much effort has been made to suppress this phenomenon.…”

Section: Methodsmentioning

confidence: 99%

Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes

et al. 2018

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We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed. The effect opens up prospects for applications in several research fields including bioelectronics and sensing applications. Our results shed light on the nature of single trap dynamics which parameters can be fine-tuned to enhance the sensitivity of liquid-gated TL silicon nanowire FETs.

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“…The most probable hypothesis for explaining these phenomena is that breakdown is triggered by a local increase in the current density due to a tunnelling assisted mechanism by the traps generated within the oxide layer and at the Si-SiO 2 interface 25 during the stress. The excellent sensibility to localised phenomena of LFNM technique makes it particularly suitable for this kind of applications [26][27][28][29] and can put in evidence phenomena that are neglected by using conventional techniques. In fact, these techniques, based on the utilisation of picoammeters or parameter analysers for monitoring the quantity under observation, are characterized by a low time resolution due to a quite narrow bandwidth: a few Hz as a maximum.…”

Section: Noise In Mos Junction and Dielectric Breakdownmentioning

confidence: 99%

Low-frequency noise measurements: applications, methodologies and instrumentation

Ciofi

Neri²

2003

SPIE Proceedings

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The analysis of the low frequency noise generated in solid state devices represents a key factor in the era of VLSI technology. This analysis is mandatory in order to obtain a characterization of the source of disturbances which cause a degradation of the signal to noise ratio. In fact, the increasing miniaturization level of modern integrated circuits leads to a significant increase in the noise to signal ratio, thus making noise one of the main limiting factors for pursuing the ultimate miniaturization limits. Moreover, as low frequency noise can be used as a probe capable of investigating the phenomena occurring at a microscopic scale, it can be useful for characterizing the quality and the reliability of microelectronic materials and devices. In the first part of this paper, as an example of possible applications, an overview of the utilization of Low Frequency Noise Measurement (LFNM) technique to the study of the most frequent causes of failure in integrated circuits and discrete components is presented and the need for purposely designed instrumentation for this type of study will be put in evidence. Starting from the examples presented in the first part, in the second part an overview of the instrumentation and procedures required to obtain a minimization of the background noise of the entire measurement system is presented. In fact, especially in the case of low frequency noise measurements (f< 1 Hz), the lack of standard, commercially available instrumentation characterized by the required sensitivity, may be one of the main obstacles to the utilization of LFNM technique. For this reason, a review of the most relevant results obtained by our research groups during the last few years in the design of dedicated ultra-low noise instrumentation and in the tuning up of the methodologies for the analysis of noise data, is presented.

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Investigation of drain current RTS noise in small area silicon MOS transistors

Cited by 12 publications

References 8 publications

Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices

Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices

Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes

Low-frequency noise measurements: applications, methodologies and instrumentation

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