Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes

Abstract

Recently published experimental results for 4H–SiC diodes up to 700 °C are used to deduce the hole lifetime temperature-dependence in n-base for high temperature range. The reverse recovery measurements are interpreted by the nonisothermal drift-diffusion simulator DYNAMIT. The uncertainties from lifetimes unknown behavior in emitter layers and consequences from possible nonuniform lifetime distribution in n-base are analyzed. Results show that up to temperature 400 °C nearly quadratic dependence of lifetime versus temperature τ ~ T 2 holds. At higher temperatures lifetime growth is accelerated approximately to quartic dependence τ ~ T 4.

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

“…These results seem to fit a second order polynomial law in this temperature range. This lifetime evolution against temperature is in agreement with the work reported in [6] based on reverse recovery measurements. However lifetime values obtained here with the OCVD technique are approximately twenty times higher than the ones in [6].…”

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law

“…Previous studies on as-grown diodes have reported the same exponential law dependence on temperature with values of α as 1.5 [10], 1.72 [37], 1.84 [11], 1.9 [38].…”

OCVD Characteristics of 4H-SiC PiN Diode with Carbon Implantation

“…The τ HL of carbon implanted diode becomes longer with the increase of the temperature to 34.7 µs at 250 O C. Figure 5 shows Arrhenius plot of τ HL of a carbon implanted diode with a temperature range from 27 O C to 250 O C. The activation energy estimated by the Arrhenius plot is 0.07 eV. This value corresponds approximately to the energy level of the shallow recombination center, which possesses a sufficiently strong emission rate at elevated temperatures [8].…”