In this paper, a numerical onedimensional steady-stke analysis of forward-biased diode structures based on direct-gap semiconductors is presented. The model used in this study is based on numerical solution of the set of fundamental equations for semiconductors with boundary conditions on contacts. The continuity equations for electrons and holes are modified to take into account the carrier generation due to band-toband recombination radiation in the n-base and p+-emitter regions. The abrupt junctions in a p +-n-n +-structure and theoretical band-to-band recombination radiation spectra are assumed. Results of calculations on GaAs are given.
The quantum mechanics courses usually do not discuss the transforms between coordinate-and momentum-presentations relevant to the basic quantum well tasks. If we use instead momentum p the wavenumber k=p/ƫ then those transforms are analogous to timedependent versus frequency-dependent transforms in classical signal processing. The paper presents numerical calculations for single and multiple quantum wells. The Heisenberg's uncertainty relation validity is directly checked and the changes in spatial spectra due to increasing periodicity are discussed.
Recently published experimental results for 4H–SiC diodes up to 700 °C are used to
deduce the hole lifetime temperature-dependence in n-base for high temperature range. The reverse
recovery measurements are interpreted by the nonisothermal drift-diffusion simulator DYNAMIT.
The uncertainties from lifetimes unknown behavior in emitter layers and consequences from
possible nonuniform lifetime distribution in n-base are analyzed. Results show that up to
temperature 400 °C nearly quadratic dependence of lifetime versus temperature τ ~ T
2 holds. At
higher temperatures lifetime growth is accelerated approximately to quartic dependence τ ~ T
4.
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