Numerical analysis of forward-biased diode structures based on direct-gap semiconductors

Comparison of photon recycling effect in GaAs and GaN structures

“…Probably the first completely numerical simulator, accounting for recombination radiation reabsorption effect in multijunction direct band-gap semiconductor structures, was developed by Velmre with collaborators [ 13,14 ]. The mathematical model used in this one-dimensional (1D) simulator was based on the finite difference solution of the full set of semiconductor equations in drift-diffusion approximation with boundary conditions on the terminal contacts of the structure.…”

“…The electron and hole continuity equations have been modified to take account of the carrier generation due to reabsorption of the band-to-band recombination radiation. Simulation results [ 13,14 ] of forward steady-state characteristics of GaAs p-i-n diodes demonstrated a significant role of the photon recycling on the behaviour of the power devices, especially at a high operation current level. Unfortunately, the Seidman-Choo iterative scheme [ 15 ], which was implemented in our early simulators, was not efficient at high forward currents.…”

“…Several authors have discussed that problem [ [25][26][27]. Our earlier publications [ 13,14 ] have followed mainly the approach of Kuriyama et al [ 26 ]. If monochromatic photon flux, emitted at , ′ x would be parallel to the x axis and equally distributed between two possible directions, the probability that a photon reaches coordinate x would be 2 ) ( exp u P α − = and the probability that a photon is absorbed at x in a layer…”

“…In our earlier studies, numerical simulation of different GaAs device structures [ 13,14 ] or analytical approximations for carrier modified diffusion coefficients and transfer factors through the device layers were considered [ 24 ]. The pure numerical simulations usually do not reveal explicitly the important interrelations between physical quantities in a wider scale.…”

Numerical Analysis of the On-State of Diode Structures Based on Direct-Gap Semiconductors

“…It was shown experimentally [ 1-41 and theoretically [5-71 that the recombination radiation emitted mostly from the n-base and p+-emitter had a considerable strong effect on the electrical parameters of such kind of devices. More general treatment of above-mentioned physical effects was given in [6] and [7] by using numerical methods to solve corresponding boundary value problems.…”