OCVD Characteristics of 4H-SiC PiN Diode with Carbon Implantation

Abstract

The open circuit voltage decay (OCVD) characteristics of the 4H-SiC pin diodes with the carbon implantation process are investigated. The bulk carrier lifetime in the fabricated devices can be estimated by using the OCVD measurement. The carrier lifetime at a high injection level (τ HL) of the fabricated diode with the carbon implantation is 10.5 µs, which is extremely longer than that of the diode with the standard process.