Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

Abstract

This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.

Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method

“…µ-PCD technique consists in measuring the decay of conductivity caused by the generation of an excess of minority carriers using a pulsed laser [4]. The OCVD is a pure electric method; it consists in measuring the transient voltage decrease on a junction in open circuit after a direct conduction period [5]. In this paper, 4H-SiC bipolar diodes are studied in order to determine the minority carrier lifetime using OBIC method.…”

Open circuit voltage decay characteristics of 4H-SiC p–i–n diode with carbon implantation

“…This is a very large value as compared with the previously reported values for the measured carrier lifetime of 4H-SiC. [21][22][23][24][25] Figure 7 shows Arrhenius plots of the extracted ¸HL of p-i-n diodes fabricated with both the standard process and the carbon implantation process in the temperature range from 27 to 250 °C. The activation energy estimated by the Arrhenius plot of the p-i-n diodes fabricated with both the standard process and the carbon implantation process is 0.07 eV.…”