Open circuit voltage decay characteristics of 4H-SiC p–i–n diode with carbon implantation

Tanaka, Atsushi; Nakayama, Koji; Asano, Kōichi; Miyazawa, Tatsuo; Tsuchida, Hidekazu

doi:10.7567/jjap.53.04ep08

Cited by 12 publications

(6 citation statements)

References 29 publications

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“…The calculated results show tendencies similar to those of the experiments, whereas the experimental temperature dependence for the undoped sample is slightly stronger than the calculation owing to the temperature dependence of the capture cross section. Although the recombination center for Nb-0.01% is shallow in the energy level compared that in conventional semiconductors, the presence of such a shallow recombination center has also been suggested in SiC [39]. The shallow recombination center in Nb-0.01% may originate from an acceptor level formed by the self-compensation mechanism against Nb donor doping as suggested by the observation of the net donor concentrations in figure 3.…”

Section: Resultsmentioning

confidence: 91%

Carrier recombination in SrTiO₃ single crystals: impacts of crystal faces and Nb doping

Kato¹,

Ozawa²,

Ichikawa³

2021

J. Phys. D: Appl. Phys.

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We observed the carrier recombination in SrTiO3 single crystals with several crystal faces and Nd doping concentrations using time-resolved photoluminescence and microwave photoconductivity decay methods. The shapes of the decay curves were independent of the excited carrier concentrations, and thus the carriers recombined through the Shockley–Read–Hall and surface recombination processes. From the measurements for different crystal faces, we found that, although the surface recombination is significant for the (100), (110), and (111) faces, they have similar surface recombination velocities of ∼106 cm s−1. Therefore, as photocatalysts, the shape of the materials has a minor effect on the energy conversion efficiency. Based on the dependence of the Nb doping concentration, a high doping concentration significantly enhances the carrier recombination, whereas a moderate Nb doping induces only a slight reduction in the time constants of the carrier decay. In addition, the time constant increases with temperature, and thus moderate Nb doping will have a positive effect on the energy conversion efficiency of SrTiO3 photocatalysts at high temperatures.

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Section: Resultsmentioning

confidence: 91%

Carrier recombination in SrTiO₃ single crystals: impacts of crystal faces and Nb doping

Kato¹,

Ozawa²,

Ichikawa³

2021

J. Phys. D: Appl. Phys.

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“…The more Fe 3+ were introduced, more photocatalytic active sites were produced [50] . Nevertheless, on the other hand, the introduced Fe 3+ sites could be the charge recombination center when the doping amount was higher than 15 % [61,62] . It is well‐advised to say finely tuning the Fe 3+ doping amount to acquire optimal band structure and charge transfer capacity is really crucial to enhancing the photocatalytic performance of CTF‐1.…”

Section: Resultsmentioning

confidence: 99%

Band Gap Tuning of Covalent Triazine‐Based Frameworks through Iron Doping for Visible‐Light‐Driven Photocatalytic Hydrogen Evolution

et al. 2021

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Photocatalytic hydrogen energy production through water splitting paves a promising pathway for alleviating the increasingly severe energy crisis. Seeking affordable, highly active, and stable photocatalysts is crucial to access the technology in a sustainable manner. Herein, a trivalent iron‐doped covalent triazine‐based framework (CTF‐1) was elaborately designed in this study to finely tune the band structure and photocatalytic activity of CTF‐1 for H2 production. With optimal doping amount, Fe10/CTF‐1 exhibited a satisfying H2 production activity of 1460 μmol h−1 g−1, corresponding to 28‐fold enhancement compared with pure CTF‐1. The Fe3+ doping is responsible for a remarkedly broadened visible‐light adsorption range, improved reduction ability and inhibited electron–hole recombination of CTF‐1. Specifically, the doped Fe3+ could serve as photocatalytically active center and “electron relay” to accelerate charge separation and transformation. This study offers a feasible strategy to validly design and synthesize CTF‐based photocatalytic materials to efficiently utilize solar energy.

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“…29) This test equipment is capable of performing double-pulse tests at up to 13 kV, 120 A, and 300 °C. The forward recovery characteristics and open-circuit voltage decay (OCVD) characteristics of the body diode were measured by applying and energizing the specified voltage and current waveforms for the device using equipment for testing transient electrical characteristics (manufactured by Coper Electronics), 30) and the waveforms were measured using a 12 bit oscilloscope (HDO4024A, manufactured by LeCroy). In this paper, a double-pulse test was conducted with a 50 mH load at a DC bus voltage of 6 kV and current of 11.5 A.…”

Section: Measurement Of the Electrical Characteristics Of 13 Kv Sic-d...mentioning

confidence: 99%

13 kV SiC-DMOSFETs and body diodes for HVDC MMC converters

Nakayama

Kuroiwa

Yamaguchi

2021

Jpn. J. Appl. Phys.

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Power electronics utilizing SiC power devices will become key components in next-generation power systems based on renewable energy, which are becoming an urgent issue worldwide. In this study, the on-characteristics and switching characteristics of 13 kV SiC-double-implanted metal-oxide-semiconductor field-effect transistors (DMOSFETs) and their body diodes were measured. In particular, the carrier lifetime, which has a significant effect on electrical characteristics, was estimated from the dynamic characteristics of the body diodes. The short carrier lifetime resulted in a large on-state voltage and a small reverse recovery loss of the body diode. Moreover, a conceptual design of a modular multilevel converter-based high-voltage, large-capacity, and self-excited AC/DC converter with 13 kV SiC-DMOSFETs was conducted, and its characteristics were investigated. When the 13 kV SiC-DMOSFETs were applied, the ratio of the total device loss to the electricity power of the converter was 1.10%, which is a significant reduction of 50% compared with 2.17% when 6.5 kV Si-insulated gate bipolar transistors were used.

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Open circuit voltage decay characteristics of 4H-SiC p–i–n diode with carbon implantation

Cited by 12 publications

References 29 publications

Carrier recombination in SrTiO₃ single crystals: impacts of crystal faces and Nb doping

Carrier recombination in SrTiO₃ single crystals: impacts of crystal faces and Nb doping

Band Gap Tuning of Covalent Triazine‐Based Frameworks through Iron Doping for Visible‐Light‐Driven Photocatalytic Hydrogen Evolution

13 kV SiC-DMOSFETs and body diodes for HVDC MMC converters

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Open circuit voltage decay characteristics of 4H-SiC p–i–n diode with carbon implantation

Cited by 12 publications

References 29 publications

Carrier recombination in SrTiO3 single crystals: impacts of crystal faces and Nb doping

Carrier recombination in SrTiO3 single crystals: impacts of crystal faces and Nb doping

Band Gap Tuning of Covalent Triazine‐Based Frameworks through Iron Doping for Visible‐Light‐Driven Photocatalytic Hydrogen Evolution

13 kV SiC-DMOSFETs and body diodes for HVDC MMC converters

Contact Info

Product

Resources

About

Carrier recombination in SrTiO₃ single crystals: impacts of crystal faces and Nb doping

Carrier recombination in SrTiO₃ single crystals: impacts of crystal faces and Nb doping