2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC) 2015
DOI: 10.1109/eptc.2015.7412394
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Investigation of Al and Ge surfaces for Al-Ge wafer level eutectic bonding

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Cited by 5 publications
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“…The Al 0.72 Ge 0.28 eutectic bonding approach has been demonstrated for 3D ICs [71], LEDs [72], passive test vehicles [73,74,75,76,77,78,79,80], and smart gyroscopes [5,81,82]. Similar to the Au-Si approach, this sealing method relies on solid-state diffusion to form the eutectic solution.…”
Section: Bonding Approachesmentioning
confidence: 99%
“…The Al 0.72 Ge 0.28 eutectic bonding approach has been demonstrated for 3D ICs [71], LEDs [72], passive test vehicles [73,74,75,76,77,78,79,80], and smart gyroscopes [5,81,82]. Similar to the Au-Si approach, this sealing method relies on solid-state diffusion to form the eutectic solution.…”
Section: Bonding Approachesmentioning
confidence: 99%