A nondestructive raman spectra stress 2D analysis for the pressure sensor sensitive silicon membrane

Wang, Zhenyu; Si, Bingjian; Su, Chen; Jiao, Binbin; Yan, Xiulan

doi:10.1016/j.engfailanal.2019.06.089

Cited by 2 publications

(1 citation statement)

References 31 publications

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“…It is well known that the residual stress of the film surface is naturally smaller than the average residual stress of the whole film thanks to the absence of covered materials [45,46]. Possibly due to the release of the residual stress generated from annealing process as well as the different detection location [47], the residual stress (0.909 GPa) of the ZnO film surface on the quartz glass substrate was significantly smaller than that calculated from the XRD detection (3.312 GPa). Furthermore, the A 1 (LO) mode is normally shown in the ZnO thin film composed of nano-particles [48].…”

Section: Discussionmentioning

confidence: 99%

Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

et al. 2019

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In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

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