GaN and related III-nitrides have attracted considerable attention as promising materials for application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present, sapphire is still the most popular commercial substrate for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs. Therefore, in order to obtain high-performance and high-power LEDs with relatively low cost, unconventional substrates, which are of low lattice mismatch with GaN, high thermal conductivity and low cost, have been tried as substitutes for sapphire. As a matter of fact, it is not easy to obtain high-quality III-nitride films on those substrates for various reasons. However, by developing a variety of techniques, distincts progress has been made during the past decade, with high-performance LEDs being successfully achieved on these unconventional substrates. This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates. The issues involved in the growth of GaN-based LED structures on each type of unconventional substrate are outlined, and the fundamental physics behind these issues is detailed. The corresponding solutions for III-nitride growth, defect control, and chip processing for each type of unconventional substrate are discussed in depth, together with a brief introduction to some newly developed techniques in order to realize LED structures on unconventional substrates. This is very useful for understanding the progress in this field of physics. In this review, we also speculate on the prospects for LEDs on unconventional substrates.

The unconventional oxide substrates have been used for the growth of high-quality GaN films due to their relatively small lattice and thermal expansion coefficient mismatches with GaN. This review focuses on the recent progress and discusses the perspectives of the epitaxial growth of GaN films on unconventional oxide substrates.

Learning an ideal metric is crucial to many tasks in computer vision. Diverse feature representations may combat this problem from different aspects; as visual data objects described by multiple features can be decomposed into multiple views, thus often provide complementary information. In this paper, we propose a cross-view fusion algorithm that leads to a similarity metric for multiview data by systematically fusing multiple similarity measures. Unlike existing paradigms, we focus on learning distance measure by exploiting a graph structure of data samples, where an input similarity matrix can be improved through a propagation of graph random walk. In particular, we construct multiple graphs with each one corresponding to an individual view, and a cross-view fusion approach based on graph random walk is presented to derive an optimal distance measure by fusing multiple metrics. Our method is scalable to a large amount of data by enforcing sparsity through an anchor graph representation. To adaptively control the effects of different views, we dynamically learn view-specific coefficients, which are leveraged into graph random walk to balance multiviews. However, such a strategy may lead to an over-smooth similarity metric where affinities between dissimilar samples may be enlarged by excessively conducting cross-view fusion. Thus, we figure out a heuristic approach to controlling the iteration number in the fusion process in order to avoid over smoothness. Extensive experiments conducted on real-world data sets validate the effectiveness and efficiency of our approach.

Water has been labeled as a devil in fabrication and stability of perovskite solar cells. The inherent cognition impels researchers to prepare perovskite films in water-controlled conditions. Herein, water is used as a green solvent to prepare CsPbBr3 films through a two-step spin-coating method. Due to the high solubility of CsBr but low solubility of PbBr2 in water, it provides a possibility to deposit CsBr onto PbBr2 from water solution without destroying the film. Here, high-quality CsPbBr3 films are fabricated by spin-coating concentrated CsBr/H2O solution onto the PbBr2 film followed by annealing. As a result, the solar cells basing on a configuration of FTO/TiO2/CsPbBr3/Carbon exhibit a power conversion efficiency of 6.12%. This work provides a simple and easy way to prepare high-quality CsPbBr3 films for efficient solar cells. It makes a solid step toward reducing the solvent toxicity in the fabrication process of perovskite solar cells. It also breaks the forbidden zone for fabricating perovskite films from water and updates the inherent understanding of water in the research study of perovskite solar cells.