Investigating FinFET Sidewall Passivation Using Epitaxial (100)Ge and (110)Ge Metal–Oxide–Semiconductor Devices on AlAs/GaAs

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

“…To confirm the successful incorporation and activation of B within the as-grown Ge:B epilayer, Hall measurements utilizing the van der Pauw geometry were performed at 300 and 77 K, revealing a 2–4 × 10 19 cm –3 carrier concentration exhibiting hole-like conduction. Similar measurements on the Ge: uid epilayer revealed a 2–4 × 10 18 cm –3 carrier concentration exhibiting electron-like conduction, as previously reported. − The electronic band structure at the Ge/AlAs(001) heterointerface was characterized using a PHI Quantera SXM XPS system equipped with a monochromatic Al–Kα ( E = 1486.7 eV) X-ray source. A low-energy electron flood gun was utilized during spectral acquisition to compensate for photogenerated electron loss and thereby minimize positive charge accumulation on the sample surface.…”

“…Moreover, as complex heterostructures become increasingly desirable in future device technologies owing to their unique electronic and optical properties, the integration of intrinsic and doped Ge thin films on multiple substrate platforms will be essential. Of particular interest for the development of next-generation, Ge-based CMOS devices is the integration of Ge thin films on large bandgap materials such as amorphous insulators (i.e., GeOI) , or crystalline, Al-bearing III–V alloys. − Consequently, understanding the impacts of (i) incorporating dopants at high concentrations and (ii) the heterointerface atomic bonding environment (e.g., Ge bound to group III vs. group IV species) on the interfacial electronic structure of such heterostructures are of equal importance.…”

Probing crystallographic orientation-specific carrier lifetimes in epitaxial Ge/AlAs and InGaAs/InP heterostructures

“…The structural analyses of these heterostructures can be found elsewhere. 5,16,33 A Probing facets in (110) InGaAs/InP heterostructures Atomic force microscopy analysis was performed from the surface of orientation-specific InGaAs/InP heterostructures. Fig.…”

“…The details of the growth procedure for epitaxial Ge and InGaAs heterostructures have been reported elsewhere. 5,16,33 Each orientation-specific heterostructure was characterized using several analytical tools, namely, high-resolution X-ray diffraction for crystallinity and composition, cross-sectional transmission electron microscopy (TEM) for interface quality and faceting, and atomic force microscopy for surface morphology. The details of these properties were reported in our earlier publications.…”

Atomic layer deposited tantalum silicate on crystallographically-oriented epitaxial germanium: interface chemistry and band alignment

“…In this work, crystallographically-oriented Ge thinfilms were grown on GaAs substrates by an in-house, solidsource molecular beam epitaxy (MBE) deposition system. [54][55][56][57][58] Cross-sectional transmission electron microscopy (X-TEM) analysis was used to determine the thickness of the as-deposited dielectric. X-Ray photoelectron spectroscopy (XPS) analysis was performed in order to study the valence and conduction band discontinues, DE V and DE C , respectively at the (Ta 2 O 5 ) 1Àx -(SiO 2 ) x /Ge heterointerface, as well as the chemical bonding environment at the interface.…”