Intrinsic and Extrinsic Electrically Active Point Defects in SiC

Defect engineering using microwave processing in SiC and GaAs

“…Considering the difference between the X1 and ESC2 energy locations, the configuration V C was associated with the ESC2 level. In addition, the connection between the level E c − 0.26 eV and the carbon vacancy is confirmed by Grossner et al [50].…”

Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation

“…The analysis of the first majority carrier peak, observed only in DUT 3 after irradiation and labelled C, provides an activation energy of 0.17 eV below EC and a capture crosssection of 𝜎 𝑛 = 6.5 × 10 −15 cm 2 . Although the energy level of 'C' points to a Ti peak according to [20], an origin related to an impurity is contradicted by the appearance of 'C' only after irradiation for DUT 3. Interestingly, a DLTS peak with similar parameters ([EV + Ea] = 0.213 ± 0.005 eV, 𝜎 𝑝 = 7 × 10 −15 cm 2 ) to the 'C' peak has been found in [21] and attributed to single-layer Shockley-type stacking faults.…”

“…This emission is associated with shallow boron on a Si site (BSi). Boron is a common impurity in SiC that is introduced during material growth [20]. For 'D', the parameters [EV + Ea] = 0.58 ± 0.02 eV, 𝜎 𝑝 = 1.4 × 10 −14 cm 2 were extracted.…”

Characterization methods for defects and devices in silicon carbide

“…There is also a broad range of point defects present in SiC but as yet there are just a few comprehensive texts categorising them in the literature. [15][16][17] SiC crystal growers have made impressive progress in improving the material quality over the last decade. Large macroscopic defects such as stacking faults, micro-pipes and carrots have almost been driven to extinction.…”

“…An overview of the unambiguously identified electrically active defects originating from extrinsic impurities is presented in Ref. 17.…”