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Zinc oxide due to specific electrical, optical and acoustic properties is the important semiconductor material, which has many various applications. There is growing interest in ZnO due to its potential applicability for optoelectronic devices such as light-emitting diodes, laser diodes and detectors for UV wavelength range. ZnO properties are very close to those of widely recognized semiconductor GaN. The band gap of ZnO (3.37 eV) is close to that of GaN (3.39 eV) but ZnO exciton binding energy (60 meV) is twice larger than that of GaN (28 meV). Optically pumped UV lasing have been demonstrated at room temperature using high textured ZnO films. The excitonic gain close to 300 cm -1 was achieved. ZnO thin films are expected to have higher quantum efficiency in UV semiconductor laser than GaN. The physical properties of ZnO are considered. PEMOCVD technology was used to deposit piezoelectric and highly transparent electroconductive ZnO films. Their properties are discussed. The experiments on polycrystalline ZnO films deposited by RF magnetron sputtering at different partial pressure of oxygen are presented. AFM images were studied in tapping mode for deposited films. The investigated films were dielectric ones and had optical transparency within 65-85% at thickness in the interval 0.2-0.6 µm.

Thermal treatment of graphitic carbon nitride (g-CN) in aqueous solutions of tetraethyl ammonium hydroxide at ∼100 °C yields colloidal solutions retaining stability at a CN concentration of up to 50 g L−1 and upon dilution by a factor of 103.

We present direct measurements of the kinetics of surface relief gratings (SRGs) formation in amorphous AsxSe100−x (20≤xAs≤50) thin films. SRGs are induced in different holographic schemes of recording using near-band-gap light and their growth is further facilitated by illumination with an interference pattern and observed in real time by in situ atomic force microscopy. It is found that the kinetics of SRG formation depends upon film composition and incident light polarization. The light-stimulated vectorial surface deformations are maximized for Se-rich glasses and increase even further by additional illumination during recording.

We present a comparative study of the strain relaxation of GaN/AlN short-period superlattices (SLs) grown on two different III-nitride substrates introducing different amounts of compensating strain into the films. We grow by plasma-assisted molecular beam epitaxy (0001)-oriented SLs on a GaN buffer deposited on GaN(thick)-on-sapphire template and on AlN(thin)-on-sapphire template. The ex-situ analysis of strain, crack formation, dislocation density, and microstructure of the SL layers has established that the mechanism of strain relaxation in these structures depends on the residual strain in substrate and is determined mainly by the lattice mismatch between layers. For growth on the AlN film, the compensating strain introduced by this film on the layer prevented cracking; however, the densities of surface pits and dislocations were increased as compared with growth on the GaN template. Three-dimensional growth of the GaN cap layer in samples with pseudomorphly grown SLs on the AlN template is observed. At the same time, two-dimensional step-flow growth of the cap layer was observed for structures with non-pseudomorphly grown SLs on the GaN template with a significant density of large cracks appearing on the surface. The growth mode of the GaN cap layer is predefined by relaxation degree of top SL layers.

We investigate self-assembled nanoislands in heteroepitaxial GeSi systems by means of atomic force microscopy and micro-Raman scattering techniques. We show that the surface diffusion of Si atoms from the substrate to the islands is strongly enhanced when the temperature increases, giving rise to a wider stability range of pyramid-shaped volumes.

Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50 to 250 °C the electrical resistivity of the GO films decreases by seven orders of magnitude and is governed by two processes with activation energies of 6.22 and 1.65 eV, respectively. It was shown that the first process is mainly associated with water and OH groups desorption reducing the thickness of the film by 35% and causing the resistivity decrease by five orders of magnitude. The corresponding activation energy is the effective value determined by desorption and electrical connection of GO flakes from different layers. The second process is mainly associated with desorption of oxygen epoxy and alkoxy groups connected with carbon located in the basal plane of GO. AFM and SKPFM methods showed that during the second process, first, the surface of GO plane is destroyed forming nanostructured surface with low work function and then at higher temperature a flat carbon plane is formed that results in an increase of the work function of reduced GO.Electronic supplementary materialThe online version of this article (10.1186/s11671-018-2536-z) contains supplementary material, which is available to authorized users.

BackgroundProbiotics have great potential to contribute to development of healthy dietary regimes, preventive care, and an integrated approach to immunity-related disease management. The bacterial wall is a dynamic entity, depending on many components and playing an essential role in modulating immune response. The impact of cell wall elasticity on the beneficial effects of probiotic strains has not been sufficiently studied.The aim was to investigate the effect of lactic acid bacteria (LAB) and bifidobacteria strains on phagocytic system cells (macrophages) as related to bacterial wall elasticity, estimated using atomic force microscopy (AFM).MethodsWe conducted studies on Balb/c line mice 18–20 g in weight using lyophilized strains of LAB—Lactobacillus acidophilus IMV B-7279, Lactobacillus casei IMV B-7280, Lactobacillus delbrueckii subsp. bulgaricus IMV B-7281, and bifidobacteria—Bifidobacterium animalis VKL and Bifidobacterium animalis VKB. We cultivated the macrophages obtained from the peritoneal cavity of mice individually with the strains of LAB and bifidobacteria and evaluated their effect on macrophages, oxygen-dependent bactericidal activity, nitric oxide production, and immunoregulatory cytokines. We used AFM scanning to estimate bacterial cell wall elasticity.ResultsAll strains had a stimulating effect on the functional activity of macrophages and ability to produce NO/NO2 in vitro. Lactobacilli strains increased the production of IL-12 and IFN-γ in vitro. The AFM demonstrated different cell wall elasticity levels in various strains of LAB and bifidobacteria. The rigidity of the cell walls among lactobacilli was distributed as follows: Lactobacillus acidophilus IMV B-7279 > Lactobacillus casei IMV B-7280 > Lactobacillus delbrueckii subsp. bulgaricus IMV B-7281; among the strains of bifidobacteria: B. animalis VKB > B. animalis VKL. Probiotic strain survival in the macrophages depended on the bacterial cell wall elasticity and on the time of their joint cultivation.ConclusionLAB and bifidobacteria strains stimulate immune-modulatory cytokines and active oxygen and nitrogen oxide compound production in macrophages. Strains with a more elastic cell wall according to AFM data demonstrated higher resistance to intracellular digestion in macrophages and higher level of their activation.AFM might be considered as a fast and accurate method to assess parameters of probiotic strain cell wall to predict their immune-modulatory properties.