Interfacial engineering of a Mo/Hf_0.3Zr_0.7O₂/Si capacitor using the direct scavenging effect of a thin Ti layer

Abstract

An antiferroelectric Mo/Hf0.3Zr0.7O2/SIOx/Si capacitor was engineered using the direct scavenging effect of a sputtered Ti sacrificial layer. Charge trapping could be mitigated with the oxidized TiO2 layer, and the endurance...

Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties

“…2d , GIXRD peaks appeared at 30.8 and 35.5° only in w/o scavenging and scavenged HZO, implying that the amorphous structure of as-deposited HZO was transformed into a mixture of orthorhombic and tetragonal phases after PMA. 40 In the XPS spectra of Hf 4f and Zr 3d binding energy levels shown in Fig. 2e , the Hf 4f 7/2 and Zr 3d 5/2 peaks appeared at 17.7 and 183.1 eV with peak differences of 1.71 and 2.43 eV, respectively, as previously reported in HZO films.…”

Neuromorphic devices based on fluorite‐structured ferroelectrics

“…Poor reliability is possible because of the high density of defects and field drop at the unintended interface 25,123 . It has been reported that the reliability and energy consumption can be improved by reducing the domain wall pinning sites through hydrogen passivation with forming gas during crystallization or by inserting other high‐k ILs with sufficiently high bandgap to replace SiO x such as TiO 2 or Al 2 O 3 27,124,125 …”

“…In contrast, FTJs are less sensitive to trapped charges during the readout process than FeFETs; however, similar reliability issues exist in FTJs based on ferroelectric/dielectric bilayers 191 . Several interfacial engineering methods, such as using a high‐k interlayer such as SiON, AlON, SiN x , ZrO 2 , Al 2 O 3 , or TiO 2 as the interlayer to replace SiO x , utilizing a scavenging layer, and optimizing annealing conditions, have been proposed to overcome these challenges, 27,124,125,169,192–203 and have showed impressive stability 96,99,192,204 . In addition to the properties related to device reliability, other key device performance parameters are scalability, switching speed, and programming energy.…”

“…25,123 It has been reported that the reliability and energy consumption can be improved by reducing the domain wall pinning sites through hydrogen passivation with forming gas during crystallization or by inserting other high-k ILs with sufficiently high bandgap to replace SiO x such as TiO 2 or Al 2 O 3 . 27,124,125 The structures shown in Figure 1B,C have the advantage of obtaining a higher TER through additional factors controlling the energy barrier, as compared to the simple M/F/M structure. This advantage, however, can also cause problems originating from a higher E dep , which is shown in Equation (1).…”

Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2

“…Consequently, relative phase stability can be altered due to subtle changes in growth conditions, that is, substrate materials. Some of the previous works reported the effects of the substrate on the electrical properties of thin-film hafnia–zirconia alloys. , However, these FE oxides are nanocrystalline when deposited as thin films on practical substrates such as nanocrystalline TiN, complicating the fundamental understanding between the microstructure and process optimization. For nanocrystalline growth, the microstructure shows a wide variety of grain sizes and subgrain features, such as domain walls and interphase boundaries, intricately convoluting the relationship between the structure and electronic properties. − …”