Ferroelectric fluorite-structured oxide thin films have attracted increased interest from both academia and industry because of their superior scalability�in which their ferroelectric properties can be maintained even below 10 nm thickness�and excellent compatibility with current complementary metal−oxide− semiconductor technology. Regarding recent efforts to downscale the technology node of semiconductor processing, the emergence of ferroelectric properties in fluorite-structured oxide thin films at small length scales is of particular interest. As the length scale of the fluorite-structured oxide thin films reaches the atomic scale, the contribution of the interfacial layer to the properties naturally increases. In particular, the quality and type of interfacial layer, as well as the reaction chemistry in response to the electric field, play a major role in determining the properties of the devices. Consequently, understanding the chemistry of ferroelectric−electrode and ferroelectric−semiconductor interfaces is crucial for their use in industrial applications in the near future. In this context, emerging semiconductor devices based on fluorite-structured oxide ferroelectrics, including ferroelectric field-effect transistors, ferroelectric random-access memories, and ferroelectric tunnel junctions, and the impact of interface chemistry in the devices are reviewed in detail.

An antiferroelectric Mo/Hf0.3Zr0.7O2/SIOx/Si capacitor was engineered using the direct scavenging effect of a sputtered Ti sacrificial layer. Charge trapping could be mitigated with the oxidized TiO2 layer, and the endurance...

The ferroelectric properties of fluorite-structured oxides have attracted significant attention from researchers because of their potential applications in nonvolatile memory devices, which are enabled by their compatibility with the complementary metal oxide semiconductor technology and physical scalability to a thickness below 10 nm. Another important emerging property of these materials is their antiferroelectricity, which originates from the field-induced transition between the polar and nonpolar phases. Various applications of fluorite-structured antiferroelectrics, such as those in volatile logic devices and cell capacitors for dynamic random-access memory, engineered nonvolatile memory, and energy storage/conversion devices, have been recently proposed, although they have not been investigated in detail compared to fluorite-structured ferroelectrics. The volatile nature of fluorite-structured antiferroelectrics with a characteristic field-induced phase transition, which clearly distinguishes them from ferroelectrics, have endowed these materials with unique properties that cannot be achieved by ferroelectrics. Therefore, the emerging antiferroelectricity of fluorite-structured oxides is comprehensively reviewed in this paper from its fundamentals to various semiconductor applications based on the existing literature.