Oxygen scavenging of HfZrO<sub>2</sub>-based capacitors for improving ferroelectric properties

Kim, Bong Ho; Kuk, Song‐Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Geum, Dae‐Myeong; Baek, Seung Hyub; Kim, Sang-Hyeon

doi:10.1039/d2na00533f

Cited by 9 publications

(3 citation statements)

References 54 publications

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“…These techniques can be categorized as direct or remote scavenging if the scavenging elements are incorporated in or isolated from the high- k layer, respectively. Many studies have attempted to remove the low- k IL in HfO 2 -based FeFETs using scavenging techniques. ,, Lee et al reduced the thickness of the low- k ILs in Al:HfO 2 -based MFIS capacitors using a remote scavenging technique with TiN/Ti/TiN top electrodes. As is evident from the HRTEM image in Figure (a), the top TiN/Ti/TiN electrode decomposes SiO 2 during annealing at 800 °C.…”

Section: Semiconductor–ferroelectric Interfacesmentioning

confidence: 99%

“…Many studies have attempted to remove the low-k IL in HfO 2 -based FeFETs using scavenging techniques. 97,102,103 Lee et al 97 Oxygen vacancies, which tend to migrate to the interface between the Al:HfO 2 and SiO 2 layers, play a role in decomposing the SiO 2 layer, simultaneously serving as mediators for transporting scavenged oxygen to the upper TiN layer. The capacitor, including the TiN/Ti/TiN top electrode, shows a lower 2V c value and a higher 2P r value compared to the case without the Ti capacitor and also maintains stable endurance characteristics up to 10 9 cycles.…”

Section: Strategies Tomentioning

confidence: 99%

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Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

et al. 2023

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Ferroelectric fluorite-structured oxide thin films have attracted increased interest from both academia and industry because of their superior scalability�in which their ferroelectric properties can be maintained even below 10 nm thickness�and excellent compatibility with current complementary metal−oxide− semiconductor technology. Regarding recent efforts to downscale the technology node of semiconductor processing, the emergence of ferroelectric properties in fluorite-structured oxide thin films at small length scales is of particular interest. As the length scale of the fluorite-structured oxide thin films reaches the atomic scale, the contribution of the interfacial layer to the properties naturally increases. In particular, the quality and type of interfacial layer, as well as the reaction chemistry in response to the electric field, play a major role in determining the properties of the devices. Consequently, understanding the chemistry of ferroelectric−electrode and ferroelectric−semiconductor interfaces is crucial for their use in industrial applications in the near future. In this context, emerging semiconductor devices based on fluorite-structured oxide ferroelectrics, including ferroelectric field-effect transistors, ferroelectric random-access memories, and ferroelectric tunnel junctions, and the impact of interface chemistry in the devices are reviewed in detail.

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Section: Semiconductor–ferroelectric Interfacesmentioning

confidence: 99%

Section: Strategies Tomentioning

confidence: 99%

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

et al. 2023

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“…The reduction of this interfacial layer can improve remnant polarization. Kim et al [19] further studied this technique helps in reducing the switching voltage and enhancing endurance. Lee et al [20] investigated on HAO and found that the Ti-inserted MFIS structure exhibits fatiguefree endurance and relatively low leakage current.…”

Section: Introductionmentioning

confidence: 99%

Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO₂/ZrO₂ ferroelectric capacitors towards long endurance and high temperature retention

Wang,

Liu,

Chen

et al. 2024

Nanotechnology

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A novel defect control approach based on laminated HfO2/ZrO2 with multifunctional TiN/Mo/TiOxNy electrode is proposed to significantly improve the endurance and data retention in HZO-based ferroelectric capacitor. The O-rich interface reduces leakage current and prolong the endurance up to 1E11 cycles while retaining a 2Pr value of 34 (μC/cm^2) at 3.4MV/cm. Using first-principles calculations and experiments, we demonstrate that the enhancement of endurance is ascribed to the higher migration barrier of oxygen vacancies within the laminated HZO film and higher work function of MoOx/TiOxNy between top electrode and the insulating oxide. This 2.5-nm-thick TiOxNy barrier further increase the grain size of HZO, lowering the activation field and thus improving polarization reversal speed. This interfacial layer further decreases the overall capacitance, increases the depolarization field, thereby enhancing the data retention. By fitting the data using the Arrhenius equation, we demonstrate a 10-year data retention is achieved at 109.6 °C, surpassing traditional SS-HZO of 78.2 °C with a 450°C RTA (required by backend-of-the-line). This work elucidates that interfacial engineering serves as a crucial technology capable of resolving the endurance, storage capability, and high-temperature data retention issues for ferroelectric memory.

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Oxygen Scavenging in HfZrO_x‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Kim

Kuk

Kim

et al. 2023

Adv Elect Materials

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the internet of things, big-data analysis, and machine learning are required. As one method to solve the issues, logic-inmemory (LiM) devices that combine the memory unit and the logic unit have been proposed, and the HfZrO x (HZO)-based ferroelectric field-effect transistor (FeFET) is one of the promising candidates for LiM devices because of its sufficient remanent polarization (P r ), low power, high speed, high scalability, and good compatibility with complementary metal-oxide-semiconductor technology. [1,2] However, when the HZO film is directly stacked on the Si substrate, an unintentional interfacial layer (IL) of SiO x is formed, resulting in a metal/ferroelectric film/insulator/semiconductor (MFIS) structure. The presence of IL causes several critical problems in ferroelectric behavior, inducing a significant amount of charge trapping, [3,4] causing a huge gate voltage (V g ) drop due to a lower dielectric constant (≈3.9), [5] and forming a strong depolarization field. [5,6] In particular, the interfacial charge trap density of ≈10 12 cm −2 is involved in breakdown and fatigue induced by charge trapping, [3,4] which causes issues of low endurance and read delay in FeFETs. [3,4,7] On the other hand, beneficial effects such as charge-assisted polarization [8] and leakage reduction [9] by IL are also exerted. Therefore, IL engineering to reduce thickness and unnecessary charge trapping is a promising direction in improving FeFET performances such as switching voltage (V sw ), memory window (MW), endurance, and retention properties.As attempts for IL engineering, methods such as the insertion of the additional IL, the modification by plasma treatment, and the inhibition of the IL formation have been reported. For the additional IL, Al 2 O 3 layers that can reduce leakage and improve endurance properties were explored, however, V sw increased due to an additional V g drop across the additional IL. [9] Alternatively, the insertion of ZrO 2 , which can improve the crystalline quality of the ferroelectric orthorhombic phase of HZO, improved P r and endurance property, but did not improve V sw . [10,11] Forming SiON by replacing SiO x was beneficial for endurance and retention properties, but a high-temperature process of 850 °C was required. [12] Treatment of IL with N 2 plasma improved endurance property only and had no effect on V sw . [13] In order to inhibit IL growth, microwave annealing, [14,15] The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrO x (HZO)-based n/p-ferroelectric field-effect transistors (FeFETs) via oxygen scavenging. Oxygen scavenging using titanium (Ti) in the gate stack successfully reduce the thickness of interfacial oxide between HZO and Si and the oxygen vacancy at the bottom interface of the HZO film. The n/p-FeFETs with scavenging exhibit an immediate read-afterwrite with stable retention property and improved endurance property. In particular, n-FeFET with scavenging exhibits excellent endurance property that does not show breakdown up t...

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Oxygen scavenging of HfZrO₂-based capacitors for improving ferroelectric properties

Abstract: HfO2-based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, and compatibility with complementary metal-oxide-semiconductor technology....

Cited by 9 publications

References 54 publications

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO₂/ZrO₂ ferroelectric capacitors towards long endurance and high temperature retention

Oxygen Scavenging in HfZrO_x‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

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Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties

Abstract: HfO2-based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, and compatibility with complementary metal-oxide-semiconductor technology....

Cited by 9 publications

References 54 publications

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO2/ZrO2 ferroelectric capacitors towards long endurance and high temperature retention

Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

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Oxygen scavenging of HfZrO₂-based capacitors for improving ferroelectric properties

Tunable defect engineering of Mo/TiON electrode in angstrom-laminated HfO₂/ZrO₂ ferroelectric capacitors towards long endurance and high temperature retention

Oxygen Scavenging in HfZrO_x‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement