Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Abstract

Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxidesemiconductor field-effect transistor applications Appl. Phys. Lett. 100, 062905 (2012); 10.1063/1.3684803 Energy-band alignment of Al 2 O 3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4 H -SiC Appl. Phys. Lett. 96, 042903 (2010); 10.1063/1.3291620Band alignments and improved leakage properties of ( La 2 O 3 ) 0.5 ( SiO 2 ) 0.5 / SiO 2 / GaN stacks for hightemperature metal-oxide-semiconductor field-effect transistor applications Impact of a γ -Al 2 O 3 ( 001 ) barrier on LaAlO 3 metal-oxide-semiconductor capacitor electrical propertiesIn order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-diamond), LaAlO 3 films with thin Al 2 O 3 buffer layers are fabricated on the H-diamond epilayers by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques, respectively. Interfacial band configuration and electrical properties of the SD-LaAlO 3 /ALD-Al 2 O 3 /H-diamond metaloxide-semiconductor field effect transistors (MOSFETs) with gate lengths of 10, 20, and 30 lm have been investigated. The valence and conduction band offsets of the SD-LaAlO 3 /ALD-Al 2 O 3 structure are measured by X-ray photoelectron spectroscopy to be 1.1 6 0.2 and 1.6 6 0.2 eV, respectively. The valence band discontinuity between H-diamond and LaAlO 3 is evaluated to be 4.0 6 0.2 eV, showing that the MOS structure acts as the gate which controls a hole carrier density. The leakage current density of the SD-LaAlO 3 /ALD-Al 2 O 3 /H-diamond MOS diode is smaller than 10 À8 A cm À2 at gate bias from À4 to 2 V. The capacitance-voltage curve in the depletion mode shows sharp dependence, small flat band voltage, and small hysteresis shift, which implies low positive and trapped charge densities. The MOSFETs show p-type channel and complete normally off characteristics with threshold voltages changing from À3.6 6 0.1 to À5.0 6 0.1 V dependent on the gate length. The drain current maximum and the extrinsic transconductance of the MOSFET with gate length of 10 lm are À7.5 mA mm À1 and 2.3 6 0.1 mS mm À1 , respectively. The enhancement mode SD-LaAlO 3 /ALD-Al 2 O 3 /H-diamond MOSFET is concluded to be suitable for the applications of high power and high frequency electrical devices. V C 2013 AIP Publishing LLC.

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

“…In order to solve this problem, some gate dielectrics with higher dielectric constant than SiO 2 (k ¼ 3.9) have been paid more attention, such as Ta 2 O 5 , HfO 2 , Al 2 O 3 , TiO 2 , Y 2 O 3 , ZrO 2 , etc. [2][3][4][5][6][7][8][9][10]. Among these gate oxides, zirconium oxide (ZrO 2 ) is one of the attractive materials.…”

Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

“…However, since the H-diamond surface is predicted to be damaged easily by plasma discharge during the SD deposition, a buffer layer is necessary to keep the 2DHG in the H-diamond. The Al 2 O 3 deposited by the ALD technique was reported to be a large valence band offset27 against the H-diamond and was confirmed to be the effective buffer layer for the SD-LaAlO 3 on the H-diamond18. Therefore, the SD-ZrO 2 /ALD-Al 2 O 3 bilayer oxide insulator would be promising for the application of the H-diamond-based MISFET.…”

“…Our group demonstrated the normally-off HfO 2 -gated MISFET with k = 9.4 using the bilayer HfO 2 structure prepared by atomic layer deposition (ALD) and sputtering deposition (SD) techniques17. This bilayer gate strategy was also applied to LaAlO 3 /Al 2 O 3 -gated MISFET with k = 9.118. Although these MISFETs showed good electrical properties, the k value was still not large.…”

“…The R ON value is usually composed of source/drain electrode contact resistance ( R C ), channel resistance beneath the oxide films ( R CH ), and source/drain-channel resistance ( R SD )141718. The R C is controlled by the metal contact to the 2DHG in the H-diamond, which is much smaller than the R CH and R SD .…”

Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond

“…5]. Based on the formula between the R ON and effective mobility (μ eff ) for the MISFETs [25,29], the μ eff for the H-diamond channel layer was evaluated to be 38.2 ± 0.5 cm 2 ·V − 1 ·s − 1 . It is in good agreement with our previous report [29].…”