Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Abstract

The effect of interface anisotropy on the electronic structure of InAs/GaSb type-II superlattices is exploited in the design of thin-layer superlattices for mid-IR detection threshold. The design is based on a theoretical envelope function model that incorporates the change of anion and cation species across InAs/GaSb interfaces, in particular, across the preferred InSb interface. The model predicts that a given threshold can be reached for a range of superlattice periods with InAs and GaSb layers as thin as a few monolayers. Although the oscillator strengths are predicted to be larger for thinner period superlattices, the absorption coefficients are comparable because of the compensating effect of larger band widths. However, larger intervalence band separations for thinner-period samples should lead to longer minority electron Auger lifetimes and higher operating temperatures in p-type SLs. In addition, the hole masses for thinner-period samples are on the order the free-electron mass rather than being effectively infinite for the wider period samples. Therefore, holes should also contribute to photoresponse. A number of superlattices with periods ranging from 50.6 to 21.2 Å for the 4 μm detection threshold were grown by molecular beam epitaxy based on the model design. Low temperature photoluminescence and photoresponse spectra confirmed that the superlattice band gaps remained constant at 330 meV although the period changed by the factor of 2.5. Overall, the present study points to the importance of interfaces as a tool in the design and growth of thin superlattices for mid-IR detectors for room temperature operation.

Interface analysis of InAs/GaSb superlattice grown by MBE

“…As a consequence, the InAs/GaSb SL system, already studied during 1980s because of its particular type-II broken gap alignment [5][6][7], is once more in the focus of numerous studies investigated [8][9][10] or planned [11] by several groups. However, the know-how in molecular beam epitaxy (MBE) growth of high-quality SLs with sharp interfaces is the key point to achieve high performance room temperature (RT) device operation and the inspection of the structural properties of such SL samples is extremely important for the further investigations of their optical properties in order to reach the criteria of third generation infrared detectors [12].…”

Short‐period InAs/GaSb superlattices for mid‐infrared photodetectors

“…By varying the layer widths within a shorter range (periods 60 Å or below), the band gaps can be easily tuned to the mid-IR detection range (3-5 µm) [4][5][6][7]. Recently, we showed [5,8] that very short-period SLs with a period as small as a few monolayers can have several properties beneficial for higher operating temperatures.…”

GaSb for passivating type-II InAs/GaSb superlattice mesas

“…Type-II InAs/GaSb superlattices (T2SL) are promising candidates for infrared (IR) focal plane arrays (FPA) based on photodiodes in all three short-, mid-, and long-IR windows [1][2][3][4][5][6][7][8][9][10]. T2SLs based on the p-i-n design [11,12] still lack stable passivation for etched mesa sidewalls in order to reduce sidewall leakage currents [13].…”