Interface analysis of InAs/GaSb superlattice grown by MBE

On the structural characterization of InAs/GaSb type-II superlattices: The effect of interfaces for fixed layer thicknesses

“…The in-plane lattice mismatch can be minimized by engineering the interfaces (between InAs and GaSb layers) which is known to have a profound effect on the device performance [10,[13][14][15][16]. Introducing special interface recipes during the growth of SLs to intentionally form 0 to 1 monolayer (ML) thick GaAs-and/or InSb-like interfaces are widely used by many research groups [8,13,14,[16][17][18][19][20][21][22]. Because of the differences in the lattice parameters, the structure can be either under compressive or tensile strain depending on the interfaces.…”

Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers

“…9 and cross-sectional scanning tunneling microscopy (XSTM). 10 Intermixing at InAs/GaSb interfaces was also studied using Z-contrast microscopy 11,12 and atomic probe tomography. 13 In the InAs/AlSb system, some structural studies reported to-date concern mainly the interfacial roughness using TEM 7,14 or interfacial intermixing using XSTM 14 In a recent study, X-ray diffraction was used to study the effect of interfaces on the averaged strain in AlSb/InAs superlattices on GaSb substrates; various growth sequences were applied in order to achieve full strain compensation.…”

Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8μm) infrared detection

“…The insertion of InSb as a strain compensating layer between InAs and GaSb layers has been reported by other researchers as well [15]. Set B includes three SLS samples grown with ''InSb-like'' interfaces formed by Sb-to-As exchange on GaSbon-InAs interface through the inclusion of variable Sb soak times (16, 18 and 20 s) in the shutter sequence [8].…”