Short‐period InAs/GaSb superlattices for mid‐infrared photodetectors

Haugan, H. J.; Szmulowicz, Frank; Brown, Gail J.; Munshi, S. R.; Wickett, J. C.; Stokes, D. W.

doi:10.1002/pssc.200674250

Cited by 8 publications

(7 citation statements)

References 12 publications

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“…This structure allows QWIPs to utilize intraband transitions within the smaller band energy material in both the valence and conduction bands. SLS devices typically utilize a type-II band structure, where the band edges of the superlattice are staggered [134]. Due to this staggering of the band edges, each material acts as a well in one band (valence or conduction) and as a barrier for adjacent layers of the other material.…”

Section: Strained-layer Superlatticesmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

225

110

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The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

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Section: Strained-layer Superlatticesmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

225

110

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“…For example, superlattices made of metals, metal oxides, and compound semiconductors have demonstrated unique functionalities such as protective coating, 1,2 magnetoresistence, 3-5 superconductivity, 6,7 IR-detection, [8][9][10] and quantum cascade lasers. 11,12 The desired physical properties are achieved through designs of the superlattice structures using layer thickness, [13][14][15] composition, 16,17 strain, 8,18 and interfaces. [19][20][21] The performances of devices built upon superlattices can be highly sensitive to the quality of superlattices formed during growth.…”

Section: Introductionmentioning

confidence: 99%

Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices

Meng

Kim

Rouvière

et al. 2014

Journal of Applied Physics

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We propose a digital model for high quality superlattices by including fluctuations in the superlattice periods. The composition and strain profiles are assumed to be coherent and persist throughout the superlattice. Using this model, we have significantly improved the fit with experimental X-ray diffraction data recorded from the nominal InAs/GaSb superlattice. The lattice spacing of individual layers inside the superlattice and the extent of interfacial intermixing are refined by including both (002) and (004) and their satellite peaks in the fitting. For the InAs/GaSb strained layer superlattice, results show: (i) the GaSb-on-InAs interface is chemically sharper than the InAs-on-GaSb interface, (ii) the GaSb layers experience compressive strain with In incorporation, (iii) there are interfacial strain associated with InSb-like bonds in GaSb and GaAs-like bonds in InAs, (iv) Sb substitutes a significant amount of In inside InAs layer near the InAs-on-GaSb interface. For support, we show that the composition profiles determined by X-ray diffraction are in good agreement with those obtained from atom probe tomography measurement. Comparison with the kinetic growth model shows a good agreement in terms of the composition profiles of anions, while the kinetic model underestimates the intermixing of cations. V C 2014 AIP Publishing LLC.

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“…Figure 6 shows the PL spectra of the InSb related transition at different temperatures. [11][12][13] The PL energy should follow, at low temperature, the E g + ͑3 / 2͒kT dependence, where E g is the effective band gap. It is important to remind that the temperature dependence of type II structure is generally more sensitive to the change in band offset than to the change in energy gap of the constituents.…”

Section: B Optical Analysis and Discussionmentioning

confidence: 95%

“…Above 50 K, the PL energy follows the usual band gap shrinkage. 13 In fact, a good fit of the InSb energy transition as a function of the temperature between 10 and 50 K is obtained by using 3 / 2kT function ͑see the inset of Fig. So, it is not obvious what temperature dependence has to be expected for the transition energy.…”

Section: B Optical Analysis and Discussionmentioning

confidence: 99%

Type II transition in InSb-based nanostructures for midinfrared applications

Intartaglia

Rainò

Tasco

et al. 2008

Journal of Applied Physics

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Articles you may be interested inEffect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers J. Appl. Phys. 114, 223510 (2013); 10.1063/1.4846756 Semipolar InN/AlN multiple quantum wells on { 10 1 ¯ 5 } faceted AlN on silicon Appl. Phys. Lett. 103, 121105 (2013); 10.1063/1.4821069 m -plane ( 10 1 0 ) InN heteroepitaxied on ( 100 ) -γ -LiAlO 2 substrate: Growth orientation control and characterization of structural and optical anisotropyWe present a study of the structural and optical properties of a heterostructure emitting in the midinfrared. The structure consists of monolayerlike InSb quantum wells inserted in an InAs/ GaSb superlattice ͑SL͒ matrix. X-ray diffraction and transmission electron microscopy analyses show a high structural quality of the structure. A strong emission line with a peak energy near 0.30 eV ͑3.5 m͒ is observed from the monolayerlike InSb. In order to identify the physical origin of this transition, excitation density and temperature dependent photoluminescence experiments have been performed on samples with different nominal InSb thicknesses and SL designs. The experimental results suggest a type II band alignment, with electrons localized in the conduction miniband of the InAs/ GaSb SL matrix and holes localized in the monolayerlike InSb. This assignment is supported by the shift of InSb layer emission to lower energies when the SL design is changed, and by tight-binding calculations.

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Short‐period InAs/GaSb superlattices for mid‐infrared photodetectors

Cited by 8 publications

References 12 publications

Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices

Type II transition in InSb-based nanostructures for midinfrared applications

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