The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

We demonstrate a multispectral polarization sensitive midinfrared dots-in-a-well photodetector utilizing surface-plasmonic resonant elements, with tailorable frequency response and polarization selectivity. The resonant responsivity of the surface-plasmon detector shows an enhancement of up to five times that of an unpatterned control detector. As the plasmonic resonator involves only surface patterning of the top metal contact, this method is independent of light-absorbing material and can easily be integrated with current focal plane array processing for imaging applications.

This paper is NOT THE PUBLISHED VERSION; but the author's final, peer-reviewed manuscript. The published version may be accessed by following the link in th citation below.

We report a metamaterial design for a thermophotovoltaic (TPV) emitter. TPVs are similar to photovoltaic solar cells, but they convert heat to electricity instead of sunlight. The focus of this paper is on the emitter stage of the TPV system, which converts the heat into a spectral band which is easily absorbable by the TPV photodiode. The proposed structure consists of a platinum metallic element, an alumina dielectric spacer, and platinum grounding plane on a sapphire substrate. This perfect absorber based metamaterial emitter is shown to robustly operate at 600 °C. This temperature is high enough to enable TPV use for many industrial applications.

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