Precision placement of heteroepitaxial semiconductor quantum dots

Hull, R.; Gray, Jennifer L.; Kammler, M.; Vandervelde, Thomas E.; Kobayashi, Takeshi; Kumar, Piyush; Pernell, Timothy L.; Bean, J. C.; Floro, J. A.; Ross, Frances M.

doi:10.1016/s0921-5107(02)00680-3

Cited by 24 publications

(28 citation statements)

References 32 publications

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“…Nucleation of dots takes place preferentially on the edges of these pits. Such an effect has been demonstrated for nucleation of QDs preferentially on pits [14,15]. Observed from the shape, size, and period, we find that the pits are consistent with the characteristics of the AAO mask.…”

Section: Resultssupporting

confidence: 79%

Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantation

Zhou

Jin

et al. 2011

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 79%

Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantation

Zhou

Jin

et al. 2011

Journal of Crystal Growth

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“…These mass-selecting FIB (MSFIB) columns make ion beam generation of much of the elements in the periodic table possible. The above capabilities, together with an attainable spatial resolution of order ten nm make FIB systems attractive for a number of applications such as nano-fabrication [1,2], guided assembly of semiconductor nanostructures [3,4] and potential nano-scale doping [5,6]. We are particularly interested in the last two applications.…”

Section: Introductionmentioning

confidence: 99%

Damage recovery of FIB modified Si for directed-assembly of semiconductor nanostructures

Balasubramanian

Hull

2015

J Mater Sci: Mater Electron

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Focused ion beam (FIB) techniques have previously been shown to have applications in templating semiconductor nanostructure growth on Si. To assess crystalline quality in this method, or in other FIB-based nano-fabrication methods in Si, we assess in this work FIBimplantation damage in Si and subsequent recovery by annealing. Specifically, we study Si substrates implanted to 1 9 10 12 -5 9 10 15 ions cm -2 fluences of 30 kV Si 2? , Ge 2? and Ga ? incident normally at room temperature, covering a structural damage regime from almost no damage to amorphization. Raman spectroscopy with incident photons of wavelength 405 and 514 nm were used for probing structural damage in different depths in as-implanted and thermally annealed substrates. Annealing was performed for varying times at 730-900°C in ultra-high purity nitrogen ambient. Structural damage quantification was performed through measurements of peak height and position of the crystalline Si peak at 520 cm -1 . Our analysis shows that a structural damage parameter, D, (defined by subtracting from unity, the ratio of the height of the Si Raman peak in implanted/annealed samples to that for the Si peak in an unimplanted standard, such that D = 0.00 and D = 1.00 correspond to pristine single crystal and amorphous Si respectively) is 0.05 or less in all the Si and Ge implants after annealing to 900°C, 1800 s. However, D for the Ga implants is close to zero for Ga fluences up to 3 9 10 13 cm -2 but increases steadily to 0.19 for 5 9 10 15 Ga cm -2 under these annealing conditions. The underlying damage recovery mechanisms are discussed.

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“…Further understanding should help in the design and simulation of both spontaneous ''bottom up'' self-assembly and directed or guided self-assembly to enhance SAQD order. [18][19][20][21][22][23][24][25] Order prediction inherently involves the modeling of stochastic processes. Recently, SAQD order has been modeled using a deterministic model with stochastic initial conditions in the linear approximation.…”

Section: Introductionmentioning

confidence: 99%

Predicting and Understanding Order of Heteroepitaxial Quantum Dots

Friedman

2007

Journal of Elec Materi

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Heteroepitaxial self-assembled quantum dots (SAQDs) will allow breakthroughs in electronics and optoelectronics. SAQDs are a result of Stranski-Krastanow growth, whereby a growing planar film becomes unstable after an initial wetting layer is formed. Common systems are Ge x Si 1Àx =Si and In x Ga 1Àx As/GaAs: For applications, SAQD arrays need to be ordered. The roles of crystal anisotropy, random initial conditions and thermal fluctuations in influencing SAQD order during early stages of SAQD formation are studied through a simple stochastic model of surface diffusion. Surface diffusion is analyzed through a linear and perturbatively non-linear analysis. The role of crystal anisotropy in enhancing SAQD order is elucidated. It is also found that SAQD order is enhanced when the deposited film is allowed to evolve at heights near the critical wetting surface height that marks the onset of non-planar film growth.

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Precision placement of heteroepitaxial semiconductor quantum dots

Cited by 24 publications

References 32 publications

Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantation

Study of molecular-beam epitaxy growth on patterned GaAs (100) substrates by masked indium ion implantation

Damage recovery of FIB modified Si for directed-assembly of semiconductor nanostructures

Predicting and Understanding Order of Heteroepitaxial Quantum Dots

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