Interface characteristics of Ge3N4-(n-type) GaAs MIS devices

Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

“…In respect to deposited films, several authors reported on chemical vapor deposition (CVD) of Ge 3 N 4 films on various semiconductors with good electrical properties. [3][4][5][6] On the other hand, direct nitridation can provide a clean, simple, and convenient method for fabricating dense, uniform, and water-insoluble dielectric films on Ge substrates with high thermal stability. In this work, we present a demonstration of pure nitridation of clean Ge substrates using a plasma process at low temperatures and Ge metal-insulator-semiconductor (Ge-MIS) structures with germanium nitride films.…”

Nanobelts of the dielectric material Ge3N4

“…These nanobelts were studied by high-resolution transmission electron microscope equipped with an x-ray energy dispersive spectrometer. [3][4][5][6] In the aforementioned materials, Ge 3 N 4 was fabricated as a two-dimensional film. The ␣ phase exhibiting slight difference from an ideal ␣-Ge 3 N 4 phase was also found in the present Ge 3 N 4 material.…”

A DLTS study of Pt/Al2O3/InxGa1 - xAs Capacitors

“…Traditionally, the MIS interface is characterized by Capacitance-Voltage (C-V) and Conductance-Voltage (G-V) techniques at different frequencies [25][26][27]. For wide-gap materials like GaAs, the analysis can be improved by performing measurements above room temperature [28,29].…”