2009
DOI: 10.1149/1.3204402
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A DLTS study of Pt/Al2O3/InxGa1 - xAs Capacitors

Abstract: Deep Level Transient Spectroscopy (DLTS) has been applied to MOS capacitors (MOSCAPs) fabricated on n- and p-type GaAs and on n-type InxGa1-xAs epitaxial layers deposited by MBE on GaAs substrates. The gate dielectric consists of 10 nm ALD Al2O3. It is shown that the dominant deep levels in the case of GaAs MOSCAPs are two broad interface-state-related bands centered around midgap, which appear to be very similar to what has been found in the past for other gate dielectrics on GaAs. At the same time, it is rep… Show more

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Cited by 5 publications
(4 citation statements)
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References 48 publications
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“…145,[149][150][151][152][153] Besides p-n junctions, one can also rely on the use of a Metal-Oxide-Semiconductor (MOS) capacitor to investigate both bulk and interface defects in III-V layers by DLTS. 154 Such an exercise has been performed on MOS capacitors Note that a similar downshift of E A with x is well-known for grown-in defects in In x Ga 1-x As ternary alloys 145,152,153 and has been interpreted in terms of a fixed position with respect to the top of the valence band edge. 153 It suggests that the deep levels are mainly composed of As-related valence band states.…”
Section: Electrical Impact Of Strain Engineering In Iii-v Materialsmentioning
confidence: 86%
See 1 more Smart Citation
“…145,[149][150][151][152][153] Besides p-n junctions, one can also rely on the use of a Metal-Oxide-Semiconductor (MOS) capacitor to investigate both bulk and interface defects in III-V layers by DLTS. 154 Such an exercise has been performed on MOS capacitors Note that a similar downshift of E A with x is well-known for grown-in defects in In x Ga 1-x As ternary alloys 145,152,153 and has been interpreted in terms of a fixed position with respect to the top of the valence band edge. 153 It suggests that the deep levels are mainly composed of As-related valence band states.…”
Section: Electrical Impact Of Strain Engineering In Iii-v Materialsmentioning
confidence: 86%
“…It is tempting to assign the deep levels in Fig. 24 to Al 2 O 3 / In x Ga 1-x As interface states, 154 which shift closer to the conduction band for increasing x. However, from the trap filling kinetics in Fig.…”
Section: Electrical Impact Of Strain Engineering In Iii-v Materialsmentioning
confidence: 98%
“…It is tempting to assign the deep levels in Fig. 10 to Al 2 O 3 /In x Ga 1-x As interface states [45], which shift closer to the conduction band for increasing x. However, from the trap filling kinetics in Fig.…”
Section: Extended Defects In Iii-v Materialsmentioning
confidence: 97%
“…On the other hand, quite some DLTS investigations of as-grown material have been reported, revealing the electrically active deep levels of dislocations in, for example, GaAs [36][37][38][39] and In x Ga 1-x As [36,[40][41][42][43][44]. Besides p-n junctions, one can also rely on the use of a Metal-Oxide-Semiconductor (MOS) capacitor to investigate both bulk and interface defects in III-V layers by DLTS [45]. Such an exercise has been performed on MOS capacitors consisting of a 50 nm Pt gate on top of 10 nm Atomic Layer Deposited (ALD) Al 2 O 3 on 100 mm diameter n-or p-type GaAs substrates, with a doping density of ~5x10 17 cm -3 .…”
Section: Extended Defects In Iii-v Materialsmentioning
confidence: 99%