(Invited) On the Electrical Activity of Extended Defects in High-Mobility Channel Materials

Simoen, Eddy; Eneman, G.; Hikavyy, Andriy; Loo, Roger; Gupta, Somya; Merckling, Clément; Alian, A.; Schulze, Andreas; Caymax, Matty; Langer, Róbert; Barla, K.; Claeys, Cor

doi:10.1149/06910.0119ecst

Cited by 7 publications

(4 citation statements)

References 52 publications

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“…All of the latter result in a deterioration of the final device performance and reliability. 6 Defect metrology capable of assessing the crystalline quality is thus of utmost importance; however, it remains an unsolved problem especially when targeting the characterization of nanoscale confined structures in a fast and non-destructive manner, with sufficiently low detection limit. Although transmission electron microscopy (TEM) can visualize individual defects, it is destructive and time consuming in nature and, moreover, has a lower detection limit of 10 7 -10 8 dislocations per cm 2 due to the small volume being analyzed.…”

Section: Introductionmentioning

confidence: 99%

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

et al. 2018

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Semiconductor heterostructures are at the heart of most nanoelectronic and photonic devices such as advanced transistors, lasers, light emitting diodes, optical modulators and photo-detectors. However, the performance and reliability of the respective devices are often limited by the presence of crystalline defects which arise from plastic relaxation of misfit strain present in these heterogeneous systems. To date, characterizing the nature and distribution of such defects in 3D nanoscale devices precisely and non-destructively remains a critical metrology challenge. In this paper we demonstrate that electron channeling contrast imaging (ECCI) is capable of analyzing individual dislocations and stacking faults in confined 3D nanostructures, thereby fulfilling the aforementioned requirements. For this purpose we imaged the intensity of electrons backscattered from the sample under test under controlled diffraction conditions using a scanning electron microscope (SEM). In contrast to transmission electron microscopy (TEM) analysis, no electron transparent specimens need to be prepared. This enables a significant reduction of the detection limit (i.e. lowest defect density that can be assessed) as our approach facilitates the analysis of large sampling volumes, thereby providing excellent statistics. We applied the methodology to SiGe nanostructures grown by selective area epitaxy to study in detail how the nature and distribution of crystalline defects are affected by the dimensions of the structure. By comparing our observations with the results obtained using X-ray diffraction, TEM and chemical defect etching, we could verify the validity of the method. Our findings firmly establish that ECCI must be considered the method of choice for analyzing the crystalline quality of 3D semiconductor heterostructures with excellent precision even at low defect densities. As such, the technique aids in better understanding of strain relaxation and defect formation mechanisms at the nanoscale and, moreover, facilitates the development and fabrication of next generation nanoelectronic and photonic devices.

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Section: Introductionmentioning

confidence: 99%

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

et al. 2018

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“…Higher n-channel µe requires: 1) relaxed >95% SiGe to 100% Ge, 2) tensile strain-Si on >25% relaxed-SiGe or 3) tensile strain >50% SiGe to 100% Ge. Using CVD epitaxial growth of SiGe and Ge requires thick SRB (strain relaxed buffer) epilayers by blanket or selective epitaxial growth but this results in threading dislocation density (TDD) in the 10 6 to 10 9 /cm 2 level degrading n+ and p+ junction leakage as reported by Simoen et al of IMEC (13). The reported targets for NMOS is 2% tensile channel strain of >1.5GPa while for PMOS, 2% compressive channel strain of >-1.5GPa at 7nm node as reported by Kim of Intel at IEDM-2015 is shown in Fig.5 (14).…”

Section: Pmos S/d Stressor Evolution From 90nm To 14nm Nodementioning

confidence: 99%

High Electron and Hole Mobility by Localized Tensile & Compressive Strain Formation Using Ion Implantation and Advanced Annealing of Group IV Materials (Si+C, Si+Ge & Ge+Sn)

Borland¹

2016

ECS Trans.

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This paper will review strain-Si and strain-Ge formation by ion implantation and advanced annealing to form localized tensile and compressive strain channel for improved electron and hole mobility in Group IV materials. Carbon implant was used to reduce the surface Si lattice constant forming Si+C material for localized compressive strain-Si channel. Ge implant was used to increase the surface Si lattice constant forming Si+Ge material for localized tensile strain-Si channel and Sn implant to increase the surface Ge lattice constant forming Ge+Sn material for localized tensile strain-Ge channel. Use of ion implant and advanced annealing for strain formation resulted in tensile strain-Si+Ge improving hole mobility by 4x and electron mobility by 1.5x while tensile strain-Ge+Sn improved electron mobility by 2-2.5x.

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“…1b shows a close-up view of the area defined by the blue rectangle. At another location, a pile-up of a dozen of TDs along the [1][2][3][4][5][6][7][8][9][10] direction is observed and marked by a green rectangle. Some specific dislocations from the long pile-up in green rectangle are magnified in Fig.…”

Section: Ecci Sensitivity Of Defect Detectionmentioning

confidence: 99%

“…To a large extent, this ongoing success story is at least partially attributed to improved controllability of the material quality. During the fabrication of complex device structures, the crystalline defects, e.g., threading dislocations (TD), stacking faults (SF) can significantly affect the device functionality and performance [1]. It is therefore of great importance to characterize and monitor the material quality of the layers which will form the active part of a device.…”

Section: Introductionmentioning

confidence: 99%

Application and Optimization of Automated ECCI Mapping to the Analysis of Lowly Defective Epitaxial Films on Blanket or Patterned Wafers

Han

Hantschel

Lagrain

et al. 2021

International Symposium for Testing and Failure Analysis

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The physical limits of CMOS scaling, as predicted by Moore's Law, should have already been reached several years ago. However, the scaling of transistors is still ongoing due to continuous improvements in material quality enabling the fabrication of complex device structures with nm-size dimensions. More than ever, the structural properties and the eventual presence of crystalline defects in the various semiconductor materials (SiGe, III/V) play a critical role. Electron channeling contrast imaging (ECCI) is a powerful defect analysis technique developed in recent years. The technique allows for fast and non-destructive characterizations with the potential for extremely low detection limits. The analysis of lowly defective materials requires measurements over large areas to obtain statistically relevant data. Automated ECCI mapping routines enable the quantification of crystalline defect densities as low as ~1e5 cm-2, e.g., Si0.75Ge0.25 strain relaxed buffers (SRB) epitaxially grown on a Si substrate. Methods to reduce the total measurement time without compromising its sensitivity will be discussed. The measurement routine has also been optimized to detect extended crystalline defects in III/V layers, selectively grown on shallow trench isolation patterned Si wafers. Throughout these examples, this study demonstrates the great potential of ECCI as a versatile and industry-relevant technique for defect analysis.

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(Invited) On the Electrical Activity of Extended Defects in High-Mobility Channel Materials

Cited by 7 publications

References 52 publications

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures

High Electron and Hole Mobility by Localized Tensile & Compressive Strain Formation Using Ion Implantation and Advanced Annealing of Group IV Materials (Si+C, Si+Ge & Ge+Sn)

Application and Optimization of Automated ECCI Mapping to the Analysis of Lowly Defective Epitaxial Films on Blanket or Patterned Wafers

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