Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

Abstract

We have fabricated Ge metal-insulator-semiconductor structures with ultrathin pure germanium nitride ͑Ge 3 N 4 ͒ films by the direct nitridation of germanium (Ge) substrates. The plasma-enhanced nitridation technique was used with dc plasma source at low temperatures. Capacitance-voltage characteristics with no hysteresis and capacitance equivalent thickness of 1.23 nm have been achieved.

Interface properties of Ge3N4/Ge(111): Ab initio and x-ray photoemission spectroscopy study

“…From the TEM image, the measured distance of two neighboring layers at Ge 3 N 4 and Ge͑111͒ side is about 3.0 and 2.45 Å, respectively. The thickness of Ge 3 N 4 grown under the above conditions is about 3.0 nm, which is consistent with the result reported by Maeda et al 6 Compared with Ref 17, low nitridation temperatures are used to obtain epitaxial Ge 3 N 4 layers. This lower temperature allows the formation of thicker Ge 3 N 4 layers, which are measured by XPS and TEM.…”

Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2Interfacial Layers

“…As for the gate insulators or interfacial control layers with Ge, various films including GeO 2 , [1][2][3][4][5][6][7][8][9][10][11] GeON, 4,6,12,13) and Ge 3 N 4 3, [14][15][16][17] have already been reported. Among them, GeO 2 / Ge interfaces have recently been reported to provide lowdensity interface defects and high-performance MOSFETs under a variety of fabrication processes.…”

Improved performance of GeON as charge storage layer in flash memory by optimal annealing

“…1b, it can be seen that Ge 3d 3/2 has one strong peak at 32.9 eV, which is shifted from the binding energy of GeO 2 . This should result from the incorporation of N because this peak lies between the binding energy of pure Ge-N (31.5-31.8 eV) [14] and that of pure GeO 2 (33.2-33.5 eV) [14][15][16]. N 1s shows two peaks at 397.4 eV and 401.2 eV, corresponding to the binding energy of N-Ge and N-O respectively and thus indicates the presence of Ge-O-N binding [17].…”