Integration Solutions for 65 nm Back End of Line Defect Reduction and Manufacturability

Abstract

This paper outlines yield improvements in the integration of damascene copper in low-k SiCOH intermetal dielectric at 65 nm dimensions. Large defect reductions were seen by RIE, wet cleans and CMP process optimization. RIE improvements led to reductions of thirty three percent for missing pattern defects while wet clean optimization resulted in more than a fifty percent reduction in metal voids. CMP carrier head changes provided a more corrosion resistant process and higher throughput. Additionally, a high performance M1 module that maintained process window for all sectors was developed.

Annealing and Impurity Effects in Co Thin Films for MOL Contact and BEOL Metallization

“…Besides the inherent film properties discussed above, an important physical characteristic of Co metallization is corrosion resistance, particularly in dilute hydrofluoric acid (DHF) solutions that are commonly used as a post dielectric etch wet clean. 42,43 Corrosion in such solutions can lead to metal voiding after Co has been deposited when the overlying metal levels are patterned. To assess resistance to dissolution in DHF, wet etch rates were determined for each Co film by progressive immersion in 1000:1 (water:HF) for various times on a single wafer wets tool.…”

Computational Fluid Dynamics Analysis of Particle Deposition Induced by a Showerhead Electrode in a Capacitively Coupled Plasma Reactor

“…In the meantime, because particle contamination (known as defects) causes severe problems during the production of thin films, it should be resolved as much as possible [4]. Thus, in the field of PECVD, defects are one of the major concerns related to the production line because defects adversely affect the product yield [5]. Therefore, an understanding of the formation of defects is highly important in PECVD.…”

“…The in-line study of defects is an important part of a yield enhancement program, which contributes to the improvement of the product yield through analyzing yield losses. In Hichri et al, it was outlined how yield improvements could be achieved in the dual damascene structure using Cu/low-k [5]. Since the design rule is shrunken, the short defects in the Cu line have become potential yield killers.…”