Investigation of defect formation in porous ultra low k film (k=2.5) for 28nm technological node

Zhou, Ming; Deng, Hao; Zhang, Beichao

doi:10.1016/j.mee.2015.04.031

Microelectronic Engineering

2015

DOI: 10.1016/j.mee.2015.04.031

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Investigation of defect formation in porous ultra low k film (k=2.5) for 28nm technological node

Ming Zhou

Hao Deng

Beichao Zhang

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Cited by 6 publications

(2 citation statements)

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“…When the ultra-low-k materials are introduced as interlevel dielectrics, the copper slurry relies heavily on the z E-mail: luanyz1988@126.com chemical route by selecting special complexing agents to achieve a low down-pressure at a low concentration of BTA. 19 We have previously reported that a key material of FA/O chelating agent which is a unique alkaline macromolecular organic base plays an important role in Cu CMP slurry without inhibitors to control planarization efficiency (PE). 20 In continuation of that study, here in-situ open circuit potential (OCP) experiments were performed to elucidate the planarization mechanism of the FA/O chelating agent and the glycine based slurry, respectively.…”

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Effect of Complexing Agent Choices on Dishing Control Level and the Shelf Life in Copper CMP Slurry

Luan¹,

Cheng²,

Liu³

et al. 2018

ECS J. Solid State Sci. Technol.

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There has been lot of work going on reducing dishing without benzotriazole (BTA) because it can lead to organic debris and other defects during the chemical mechanical planarization (CMP) although being an effective dissolution inhibitor on dishing elimination. Slurry destabilization problems also have to be closely monitored because it can cause surface defects and changes in the material removal due to particle agglomeration and the chemical degradation. In this study, FA/O chelating agent, a unique alkaline organic macromolecule, yielded a lower dishing level under the condition of no BTA compared with glycine, which allows for a substantial reduction in the use of BTA. The dissolution rate, polish rate and changes in the in-situ open circuit potential (OCP) were performed to elucidate the planarization mechanism and how the use of carcinogenic BTA can be reduced. It was also observed that the FA/O based slurry had a shelf life of no more than 7 days and the root cause was the oxidation reduction reaction between FA/O chelating agent and H 2 O 2 rather than the self-decomposition of the hydrogen peroxide.

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confidence: 99%

Effect of Complexing Agent Choices on Dishing Control Level and the Shelf Life in Copper CMP Slurry

Luan¹,

Cheng²,

Liu³

et al. 2018

ECS J. Solid State Sci. Technol.

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“…[5][6][7][8][9] Because the other types of defects produced could be removed by other means during post CMP cleaning process, but the removal of scratches is not an easy task. [10][11][12][13] Scratches, such as micro-scratches on the wafer surface may lead to device failure and yield reduction as well as potential reliability issues. [14][15][16][17] Typically, a CMP process consists of chemical and mechanical interactions between the wafer and polishing pad with a slurry.…”

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confidence: 99%

Role of Dispersant Agent on Scratch Reduction during Copper Barrier Chemical Mechanical Planarization

Liu

Wang

et al. 2018

ECS J. Solid State Sci. Technol.

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The chemical mechanical planarization (CMP) has been one of the major manufacturing process to provide global and local surface planarizations in integrated circuits (IC) fabrications. Defects such as micro-scratches generated during CMP can lead to severe circuit failure, which affects yield. In the present work, ethoxylated decylalchohol (EDA) was used as dispersant agent to prevent the particles agglomeration to reduce scratches. Firstly, the effect of EDA on particle size distribution (PSD) of the slurry was investigated by dynamic light scattering (DLS) method. Then the effect of EDA on large particle counts (LPC) was studied through a dual sensor single particle optical sensing (SPOS) analysis method. The wetting ability of slurries as a function of EDA concentration was also studied. Finally, the defect scan tool and scanning electron microscope (SEM) reviewer were used to identify the scratch defects. The results show that the addition of EDA into the slurry can enhance the dispersity of colloidal silica abrasives and significantly reduce the number of large particles in the slurry, the SEM review results show that the scratch counts remarkably decreases with EDA concentration increasing. It can be demonstrated that the EDA can effectively reduce the scratch counts.

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Investigation of the barrier slurry with better defect performance and facilitating post-CMP cleaning

Luan

Liu

Zhang

et al. 2017

Microelectronic Engineering

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Investigation of defect formation in porous ultra low k film (k=2.5) for 28nm technological node

Cited by 6 publications

References 12 publications

Effect of Complexing Agent Choices on Dishing Control Level and the Shelf Life in Copper CMP Slurry

Effect of Complexing Agent Choices on Dishing Control Level and the Shelf Life in Copper CMP Slurry

Role of Dispersant Agent on Scratch Reduction during Copper Barrier Chemical Mechanical Planarization

Investigation of the barrier slurry with better defect performance and facilitating post-CMP cleaning

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