2017
DOI: 10.1109/ted.2017.2731205
|View full text |Cite
|
Sign up to set email alerts
|

Integrating Poly-Silicon and InGaZnO Thin-Film Transistors for CMOS Inverters

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
17
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 49 publications
(19 citation statements)
references
References 19 publications
0
17
0
Order By: Relevance
“…The development of high mobility thin-film transistors (TFTs) is a highly demanded research topic, in order to meet the requirements for advanced applications such as driving circuits, nonvolatile memory devices and flexible integrated circuits [1,2]. Inorganic oxide semiconductors such as zinc oxide (ZnO) or Indium-Gallium Zinc Oxide (IGZO) are considered an important alternative to the mature amorphous silicon TFT technology mainly to their high performance and low temperature deposition [1,2]. However, the research of new materials with higher electron mobilities to be considered for TFTs applications is under development.…”
Section: Introductionmentioning
confidence: 99%
“…The development of high mobility thin-film transistors (TFTs) is a highly demanded research topic, in order to meet the requirements for advanced applications such as driving circuits, nonvolatile memory devices and flexible integrated circuits [1,2]. Inorganic oxide semiconductors such as zinc oxide (ZnO) or Indium-Gallium Zinc Oxide (IGZO) are considered an important alternative to the mature amorphous silicon TFT technology mainly to their high performance and low temperature deposition [1,2]. However, the research of new materials with higher electron mobilities to be considered for TFTs applications is under development.…”
Section: Introductionmentioning
confidence: 99%
“…For the a‐IGZO TFT, the LT‐GI provides an excellent performance. LTPO TFT backplanes are used in displays with a coplanar LTPS and ES or BCE a‐IGZO TFTs. We choose the coplanar structure for both LTPS and a‐IGZO TFTs for the LTPO CMOS circuits to reduce parasitic capacitance …”
Section: Resultsmentioning
confidence: 99%
“…On the contrary, LTPS backplane is used for commercial LCD and OLED displays of smartphones . Recently, low‐temperature polysilicon oxide (LTPO) is of increasing interest for the use of high mobility p‐channel LTPS TFT and very low off‐current a‐IGZO TFT . The combination of these two devices with the simplified process is key for its application to displays.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Beside, using oxide and LTPS transistors in panel circuits for low power consumption display has been reported 6–12 . In this paper, we have proposed high refresh rate and low power consumption OLED panel, by simultaneously utilizing both p‐LTPS and n‐type indium–gallium–zinc–oxide (n‐IGZO).…”
Section: Introductionmentioning
confidence: 99%