Integrated Vertical Parallel Plate Capacitive Humidity Sensor

Lazarus, Nathan; Fedder, G.K.

doi:10.31438/trf.hh2010.64

Cited by 3 publications

(4 citation statements)

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“…Fig. 3 shows various approaches to implementing the sensing capacitor in CMOS, all requiring some post processing to remove the passivation layer and deposit the humidity sensing layer [22], [25]- [28]. The approaches in Figs 3(a) [22], 3(b) [25] and 3(c) [26] are more complex than those in Figs 3(d) [27] and 3(e) [28] as the sensing layer is placed between different metal layers rather than on top of the upper metal layer.…”

Section: Humidity Sensormentioning

confidence: 99%

“…4 shows the simplified schematic of the relaxation oscillator used to convert a change of capacitance to a change of frequency [30]. Currents Icharge and Idischarge (mirrored from between parallel-plate electrodes [22], [25], (c) between lateral electrodes [26], (d) on top of electrodes [27], and (e) on top of interdigitated electrodes [28]. Interconnection between core circuits and pre-buffers * , output buffers * , and ESD cells * (the routing needs to trespass the power rings) ✓ * These are located between the seal ring and the power ring.…”

Section: Humidity Sensormentioning

confidence: 99%

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An Implantable Stimulator With Safety Sensors in Standard CMOS Process for Active Books

et al. 2016

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Section: Humidity Sensormentioning

confidence: 99%

Section: Humidity Sensormentioning

confidence: 99%

An Implantable Stimulator With Safety Sensors in Standard CMOS Process for Active Books

et al. 2016

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“…Another application is design of capacitive plates in the z-axis (i.e., out of the wafer plane). For example, the device in Figure 9 is a CMOS MEMS parallel-plate capacitor whose air gap is formed by the sacrificial metal-2 layer in a 4metal 0.35 μm CMOS process (26). The gap was subsequently filled with polyimide using inkjet deposition to form a compact integrated capacitive humidity sensor.…”

Section: Beol Cmos Memsmentioning

confidence: 99%

(Invited) CMOS MEMS Integration

Fedder¹

2011

ECS Trans.

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The "More than Moore" trend in the microelectronics industry is driving a renewed interest in mixed-physics CMOS MEMS integration. Integration becomes a necessity for multi-component microsystems, where interconnect issues are significant. Integration also drives down parasitic capacitances and provides opportunities for ultra-low-power microsystems. Several monolithic approaches exist that create MEMS from the layers in the back-end-of-line CMOS stack or by adding materials on top of the CMOS stack. These processes have been used to create a variety of microsystems including inertial sensors, RF tunable capacitors and probe manipulators. Process extensions include addition of sensitizing polymers by inkjet for gravimetric gas chemical sensors, etch of intermediate metal layers followed by polymers fill for capacitive chemical sensors, and plasma polymer deposition on micro-meshes to form diaphragms. The chip-stacking approach to integration is still in its infancy but benefits from the rapid maturation of technologies for chip thinning and for through-silicon vias.

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“…It is impossible to fabricate a humidity sensor, that can deliver all the above mentioned parameters. In these expectations, for the commercialization of humidity sensors, several researchers are working on different designs based on interdigital electrodes (IDEs) 4 , capacitance-based design 5 , piezoelectric 6 , and surface acoustic waves 7 . In all of these proposed humidity designs, the IDEs based humidity sensors are more preferred for environment monitoring as it provides higher sensitivity by efficiently detecting any change in active film characteristics on all electrode fingers 3 .…”

Section: Introductionmentioning

confidence: 99%

Wide range and highly linear signal processed systematic humidity sensor array using Methylene Blue and Graphene composite

Khan

Hassan

Shaukat

et al. 2021

Sci Rep

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This paper proposes a signal processed systematic 3 × 3 humidity sensor array with all range and highly linear humidity response based on different particles size composite inks and different interspaces of interdigital electrodes (IDEs). The fabricated sensors are patterned through a commercial inkjet printer and the composite of Methylene Blue and Graphene with three different particle sizes of bulk Graphene Flakes (BGF), Graphene Flakes (GF), and Graphene Quantum Dots (GQD), which are employed as an active layer using spin coating technique on three types of IDEs with different interspaces of 300, 200, and 100 µm. All range linear function (0–100% RH) is achieved by applying the linear combination method of nine sensors in the signal processing field, where weights for linear combination are required, which are estimated by the least square solution. The humidity sensing array shows a fast response time (Tres) of 0.2 s and recovery time (Trec) of 0.4 s. From the results, the proposed humidity sensor array opens a new gateway for a wide range of humidity sensing applications with a linear function.

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Integrated Vertical Parallel Plate Capacitive Humidity Sensor

Cited by 3 publications

References 0 publications

An Implantable Stimulator With Safety Sensors in Standard CMOS Process for Active Books

An Implantable Stimulator With Safety Sensors in Standard CMOS Process for Active Books

(Invited) CMOS MEMS Integration

Wide range and highly linear signal processed systematic humidity sensor array using Methylene Blue and Graphene composite

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