Integrated passive devices using Al/BCB thin films

Clearfield, H. M.; Wijeyesekera, S.D.; Logan, E.A.; Luu, Anh Tuyen; Gieser, D.; Lin, Chao-Wei; Jing, Jennifer; Rogers, W.B.; Scheck, D.; Benson, Dewey; He, Jinlong

doi:10.1109/icmcm.1998.670831

Cited by 15 publications

(4 citation statements)

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“…BCB has been commercialized by a number of companies for this application due to its low cure temperature, outstanding flow/planarization properties and low dielectric constant (compared to other polymeric materials). GaAs devices passivated with Cyclotene 4024 were packaged in SOIC packages and put through the [47] reliability tests by Anadigics. No failures were observed.…”

Section: Discussionmentioning

confidence: 99%

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Stress-buffer and passivation processes for Si and GaAs IC's and passive components using photosensitive BCB: process technology and reliability data

Ganrou

Rogers

Scheck

et al. 1999

IEEE Trans. Adv. Packag.

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Polymer coatings are applied to chips and passive components to provide stress relief between the device/component and the plastic package and/or to provide mechanical and environmental protection. The semiconductor industry is actively pursuing a one mask, photosensitive dielectric process for stressbuffer and secondary passivation of memory die. A one mask photo-benzocyclobutene (BCB) process is compared to traditional two mask wet etch processes. This new one mask process reveals 1/3 the total wafer processing time and equivalent reliability (traditional MIL 883C testing) for passivated 100 lead static random access memory components (SRAM's).

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Section: Discussionmentioning

confidence: 99%

“…pass all of the stress conditions that have criteria noted. Data are included for both packaged and unpackaged devices [47].…”

Section: Passive Componentsmentioning

confidence: 99%

Stress-buffer and passivation processes for Si and GaAs IC's and passive components using photosensitive BCB: process technology and reliability data

Ganrou

Rogers

Scheck

et al. 1999

IEEE Trans. Adv. Packag.

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“…Using LTCC technology, passive lumped elements of inductor and capacitor can be embedded in its multi-layer substrate. However using organic laminate [4] and thin film IPD (Integrated Passive Device) [5] technologies to realize embedded passives have also been developed in the industry.…”

Section: Introductionmentioning

confidence: 99%

Miniaturized WiFi system module using SiP/IPD for handheld device applications

Liu¹,

Wang²,

Lee³

et al. 2007

2007 International Microsystems, Packaging, Assembly and Circuits Technology

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A compact and thin WiFi SiP module using IPD (Integrated Passive Device) technology is proposed. The WiFi SiP module integrates WiFi single chip, RF front end, EEPROM, and IPD chip as a full system module that can be easily used for 802.11b/g WLAN application, especially in handheld devices. The IPD chip is designed on a silicon substrate to embed passive components required for the WiFi chip and to be a chip carrier for the active ICs integrated in the module. The IPD is fabricated on a silicon substrate using thin film process to build up low cost, high accuracy, and high quality passive elements of resistors, capacitors, and inductors. Two types of SiP approaches to implementing the WiFi modules are presented. Their dimensions are 8.5x8.5x1.3 mm 3 and 5.7x9x0.925 mm 3 , respectively. At 2.4 GHz and modulation of 54 Mbps data rate, the WiFi module can provide linear output power up to 13 dBm and its receiving sensitivity is -72 dBm.

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“…Integrated passive devices (IPDs) have attracted much attention in recent years, primarily due to the needs of handheld wireless devices to further decrease in cost and size and increase in functionality [1,2]. Many function blocks, such as impedance matching circuits, harmonic filters, couplers, baluns, and power combiners/dividers, in the RF modules can be realized by using IPD technology [3,4,5].…”

Section: Introductionmentioning

confidence: 99%

Compact harmonic filter design and fabrication using IPD technology

Liu¹,

Kuo²,

Abrokwah³

et al.

Proceedings Electronic Components and Technology, 2005. ECTC '05.

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An Integrated Passive Device (IPD) on GaAs technology has been developed to meet the ever increasing needs of size and cost reduction in radio transmit module applications. Extensive electromagnetic (EM) simulations were used in the design of process technology and the optimization of inductor and harmonic filters design and layout. Parameters such as inductor shape, inner diameter, metal thickness, metal width and substrate thickness have been optimized to provide inductors with high quality factors. The technology includes the following features: 1) thick plated gold metal process to reduce resistive loss; 2) MIM capacitors using PECVD Si 3 N 4 dielectric layer; 3) airbridges for inductor underpass and capacitor pick-up; and 4) 10mil finished GaAs substrate to improve inductor quality factor. Both lumped element circuit simulation and electromagnetic (EM) simulations have been used in the harmonic filter circuit design for fast design cycle time and high accuracy. This paper will present the EM simulation calibration and demonstrate the importance of using EM simulations in filter design in order to achieve success in first wafer fabrication. The fabricated IPD devices have insertion loss of <0.5dB and harmonic rejections of >30dB with die size of 1.42mm 2 for high band (1710MHz -1910MHz) and 1.89mm 2 for low band (824MHz-915MHz) harmonic filters.

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Integrated passive devices using Al/BCB thin films

Cited by 15 publications

References 0 publications

Stress-buffer and passivation processes for Si and GaAs IC's and passive components using photosensitive BCB: process technology and reliability data

Stress-buffer and passivation processes for Si and GaAs IC's and passive components using photosensitive BCB: process technology and reliability data

Miniaturized WiFi system module using SiP/IPD for handheld device applications

Compact harmonic filter design and fabrication using IPD technology

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