2009
DOI: 10.1021/jp9051402
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Insulator to Semimetal Transition in Graphene Oxide

Abstract: Transport properties of progressively reduced graphene oxide (GO) are described.Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to increased number of available hopping sites.

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Cited by 594 publications
(499 citation statements)
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“…As the room-temperature conductivity approaches saturation after high-temperature annealing, the characteristic hopping energies of the two coals converge and approach a minimum. The values here reported are in good agreement with those for single flake rGO devices (20−140 K 1/3 depending strongly on the degree of reduction) 43,44 and a-C (from 220 K 1/4 for σ = 10 −5 S/m to 87 K 1/4 for σ = 10 0 S/ m). 45,46 This demonstrates that in addition to possessing similar chemical properties, including the sp 2 domain size and amount of disorder, these properties result in the same conduction mechanism for the natural sourced carbon material and comparable synthetic materials such as a-C and rGO.…”
Section: * S Supporting Informationsupporting
confidence: 87%
“…As the room-temperature conductivity approaches saturation after high-temperature annealing, the characteristic hopping energies of the two coals converge and approach a minimum. The values here reported are in good agreement with those for single flake rGO devices (20−140 K 1/3 depending strongly on the degree of reduction) 43,44 and a-C (from 220 K 1/4 for σ = 10 −5 S/m to 87 K 1/4 for σ = 10 0 S/ m). 45,46 This demonstrates that in addition to possessing similar chemical properties, including the sp 2 domain size and amount of disorder, these properties result in the same conduction mechanism for the natural sourced carbon material and comparable synthetic materials such as a-C and rGO.…”
Section: * S Supporting Informationsupporting
confidence: 87%
“…Figure 5 show that the transport is only described by p =1/2 model. In previously reported data on single layer RGO devices, 2D Mott VRH (p =1/3) was reported [11,[19][20]. This may be due to limited temperature range of the data where it might be possible to fit the same data with both T -1/2 and The calculated value of ξ is about 3.5 nm which is comparable to the calculated GQD sizes, indicating strong localization of the wave function inside each graphitic domain.…”
Section: Theoretical Studies Of Qd Arrays By Middleton and Wingreen (supporting
confidence: 59%
“…All these studies clearly suggest that RGO should behave as a two dimensional array of graphene quantum dots (GQD), which should be verified from low temperature electron transport measurements. However, previous electrical transport studies of RGO in limited temperature range show 2D Mott variable range hopping (VRH) [11,[19][20] which is not expected from a QD array model. Additionally, Mott VRH neglects the Coulomb interaction between localized graphitic domains which may be significant at low temperature as recent study of individual 10 nm sized graphene quantum dots show room temperature Coulomb blockade (CB) [21,22].…”
Section: Introductionmentioning
confidence: 81%
“…The deviation from linear fit at the lower temperautre regime can be explained by the contribution of the field-driven conduction without thermal activation [46][47][48] . However, the GO sheet with a lower O/C composition of 0.32 showed a deviation from the linear fit (that is, 2D-VRH model) at all examined V ds and the temperature dependence of the s min at the higher temperature regime can be fitted reasonably well with the Arrhenius model, suggesting that thermally excited carriers begin to dominate electrical conduction 49 . Based on the transport properties of the GO sheets, we can conjecture that the bandgap energy of GO was narrowed down as the O/C composition decreased from 0.80 to 0.32, which is in agreement with the UV-vis measurement.…”
Section: Synthesis Of the Go Sheetsmentioning
confidence: 81%