2016
DOI: 10.1021/acs.nanolett.5b04735
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Rethinking Coal: Thin Films of Solution Processed Natural Carbon Nanoparticles for Electronic Devices

Abstract: Disordered carbon materials, both amorphous and with long-range order, have been used in a variety of applications, from conductive additives and contact materials to transistors and photovoltaics. Here we show a flexible solution-based method of preparing thin films with tunable electrical properties from suspensions of ball-milled coals following centrifugation. The as-prepared films retain the rich carbon chemistry of the starting coals with conductivities ranging over orders of magnitude, and thermal treat… Show more

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Cited by 40 publications
(38 citation statements)
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“…While the mass loss does not continue beyond 600 °C (see extended TGA in Figure S2, Supporting Information), the sheet resistances of films annealed at 600 °C remain above 20 kΩ □ –1 , and therefore beyond the sensitivity of available characterization equipment. As we reported in our previous work on electronic devices made from various sintered coal particles, annealing between approximately 600 and 950 °C causes a dramatic increase in carbon bond disorder and a rapid conversion to an aromatic‐rich, highly interconnected a‐C framework with significantly lower sheet resistance, with aromatic domain size increasing with temperature . As expected, SCT films annealed at 950 °C showed significantly lower sheet resistances, as low as around 1 kΩ □ –1 depending on film thickness (see Figure c).…”
supporting
confidence: 79%
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“…While the mass loss does not continue beyond 600 °C (see extended TGA in Figure S2, Supporting Information), the sheet resistances of films annealed at 600 °C remain above 20 kΩ □ –1 , and therefore beyond the sensitivity of available characterization equipment. As we reported in our previous work on electronic devices made from various sintered coal particles, annealing between approximately 600 and 950 °C causes a dramatic increase in carbon bond disorder and a rapid conversion to an aromatic‐rich, highly interconnected a‐C framework with significantly lower sheet resistance, with aromatic domain size increasing with temperature . As expected, SCT films annealed at 950 °C showed significantly lower sheet resistances, as low as around 1 kΩ □ –1 depending on film thickness (see Figure c).…”
supporting
confidence: 79%
“…Figure a shows the transmittance of SCT films with varying degrees of annealing. Two effects are competing here: the previously noted mass loss of the films up to 500–600 °C, reducing the total light absorption; and the well known reduction of the bandgap with increasing conjugation at increasing annealing temperatures . Figure a shows a dramatic decrease in the slope of the transmittance between unannealed films and those annealed at 400°C, indicating a decrease in bandgap according to the Tauc construction for disordered materials .…”
mentioning
confidence: 75%
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