Initial Cu Growth in Cu-Seeded and Ru-Lined Narrow Trenches for Supercritical Fluid Cu Chemical Deposition

Abstract

A 6-dimensional grand unified theory with the compact space having the topology of a real projective plane, i.e., a 2-sphere with opposite points identified, is considered. The space is locally flat except for two conical singularities where the curvature is concentrated. One supersymmetry is preserved in the effective 4d theory. The unified gauge symmetry, for example SU(5) , is broken only by the non-trivial global topology. In contrast to the Hosotani mechanism, no adjoint Wilson-line modulus associated with this breaking appears. Since, locally, SU(5) remains a good symmetry everywhere, no UV-sensitive threshold corrections arise and SU(5)-violating local operators are forbidden. Doublettriplet splitting can be addressed in the context of a 6d N = 2 super Yang-Mills theory with gauge group SU(6). If this symmetry is first broken to SU(5) at a fixed point and then further reduced to the standard model group in the above non-local way, the two light Higgs doublets of the MSSM are predicted by the group-theoretical and geometrical structure of the model.

Supercritical CO2 reactor for wafer-scale thin film deposition: reactor concept, numerical results, and Cu depositio.

“…The deposition conditions are summarized in Table 1. It should be noted that the Cu(dibm) 2 concentration was set to a higher value than in our past research [20,[24][25][26]. The reason for this is as follows.…”

Supercritical fluid chemical deposition of Cu in Ru and TiN-lined deep nanotrenches using a new Cu(I) amidinate precursor

“…However, when the temperature was increased to 240°C [ Fig. 10(c)] the speed of the Cu diffusion increased leading to grain worsening and agglomeration [28]. Fig.…”

In-situ Spectroscopic Ellipsometry of the Cu Deposition Process from Supercritical Fluids: Evidence of an Abnormal Surface Layer Formation

“…Even if there is a tendency of the particle formation, the deposited granular Cu is thought to be unstable in scCO 2 , and a continuous thin film is formed because Cu easily aggregates and sinters in scCO 2 . 17,49) 4.3 Substrate effects on initial growth of Cu 4.3.1 X layer development Ru is now gaining a lot of attention in LSI metallization. For example, uses as a barrier metal [50][51][52] and as a seed/ liner [53][54][55] metal have been proposed.…”

“…We studied the initial growth and morphology development of Cu deposition previously. 17) Cu grown on Cu-seed had a rough granular structure but showed a bottom-up growth manner in narrow trenches. Contrarily, on Ru-liner, we observed a smooth and conformal growth behavior.…”