Initial Assessment of the Effects of Radiation on the Electrical Characteristics of ${\rm TaO}_{\rm x}$ Memristive Memories

Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices

“…Finally, we note that NbO x and TaO x , in their high resistive states, have rather small carrier concentrations, on the order of 10 16 -10 17 cm −3 [19]- [21]. At a similar dose of 0.6 Mrad(NbO 2 ), NbO x devices have shown 7.1% change in V H , 50% change in I H , and 78.5% change in R H [22].…”

“…At a similar dose of 0.6 Mrad(NbO 2 ), NbO x devices have shown 7.1% change in V H , 50% change in I H , and 78.5% change in R H [22]. In TaO x devices, just 10 krad(SiO 2 ) irradiation flipped the OFF (high resistance) state to ON (low resistance) state with a 100-fold decrease in resistance in [21]. On the other hand, HfO 2 -based resistive memory elements have carrier densities of ∼10 20 cm −3 in their conductive state [23], and have been demonstrated to be quite tolerant to TID exposure above 1 Mrad(SiO 2 ) [24], consistent with this interpretation.…”

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

“…In VCM, there are three main materials that have been the focus of research to date; TaO x , HfO x , and TiO x although some research into SiO x has also been conducted [92]- [94], [96], [99], [101]- [109]. Over the years, variations in radiation responses between different or even the same materials has been reported.…”

“…A large amount of work, however, does report radiation effects in VCM memory at high doses which include changes in voltages, resistance, and in some cases, a complete switch of state [92], [93], [96], [102], [103], [106], [109], [111]- [114]. In these cases, it is thought that the induced charge and oxygen vacancies interfere with the conductive filament switching mechanism and/or the resistance of the oxide.…”

“…These mechanisms include trapping of radiation-induced charge at preexisting or radiation generated oxygen vacancies or defects and alteration or creation of internal electric fields and transient currents [92], [93], [96], [102], [104]- [106], [109], [111]- [114]. This can lead to obstruction of oxygen vacancy movement or joule heating which can, in turn, lead to the creation of additional oxygen vacancies [92], [102], [104], [115]. If field alterations or transient currents are large enough, state switching can occur [104], [112], [115].…”