Infrared transmission topography for whole-wafer gallium arsenide materials characterization

Mier, M. G.; Walters, D. C.; Beasley, D. L.

doi:10.1016/0038-1101(92)90235-5

Cited by 8 publications

(1 citation statement)

References 7 publications

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“…GaAs material vendors generally report measured shallow acceptor concentrations between lo"/cm' and 10'5/cm3 and deep donor EL2 concentrations on the order of 10 16 /cm3. Independent measurements utilizing an optical transmission technique [42,43] indicated that the material used for our detectors had acceptor concentrations on the order 10 15 /cm3 and deep donor EL2 concentrations on the order of 10 16 /cm3 [44] . At room temperature, the shallow dopants are assumed to be fully ionized such that Na-= Na and Nd = Nd .…”

Section: Detectors Fabricated From Bulk Gaasmentioning

confidence: 99%

Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer

McGregor

Rojeski

Knoll

et al. 1994

Nuclear Instruments and Methods in Physics Research Section A:

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Bulk GaAs has undergone extensive research by several groups in order to ascertain its usefulness as a room temperature radiation spectrometer. The results of an experimental program studying the properties of detectors fabricated from bulk GaAs are summarized in this paper. Electric field models of the active region are compared with measured results. Limitations of bulk LEC GaAs as a material for radiation spectrometers are discussed.

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Section: Detectors Fabricated From Bulk Gaasmentioning

confidence: 99%