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The distribution of an electric field and the amplitude spectra obtained experimentally in the presence of ionization losses of charge particles in a detector of ~z-v-n-structures are presented in this" paper. It is shown that trapping of" nonequilibrium holes by negatively charged deep centers keeps the electric field in the track high enough for electron drft with maximum velocity. Due to this, the charge collection efficiency (CCE) reaches 50-60%.One of the most important directions of sensory electronics is the development of detectors capable of registering charged particles and quanta of electromagnetic radiation with high efficiency. The efforts of scientists from different countries are directed to searching for new materials and structures with high detection efficiency. Gallium arsenide is a prospective material for these purposes, which is due to its high radiation hardness, high absorption coefficient of gammaradiation, and wide band gap (Eg = 1.43 eV). The advantages of using p-i-n-structures and Shottky diodes based on semiinsulating (SI) grown GaAs in nuclear physics and high energy physics are presented in [1,2].Since the CCE is an important parameter of a semiconducting detector, many researchers study the mechanism of collection of non-equilibrium charge carriers created by ionizing particles or electromagnetic radiation. It is shown that a drift mechanism of charge collection takes place in detector structures based on SI GaAs. The influence of the electric field distribution in the track on the CCE has been analyzed in [3][4][5][6][7]. It is noted that the width of a region with high electric field exceeds the calculated value of the SCR and the CCE correlates with the thickness of the highly resistive layer, where the strength of the electric field is more than 1 kV/cm. The influence of deep centers, being a concurrent part of SI GaAs, on the value and time distribution of the amplitude of the charge induced was studied in [8][9][10][11][12][13][14][15]. In these works, it is shown that trapping of non-equilibrium charge carriers, created by ionization losses in the track, on the deep centers leads to the decrease of the induced charge amplitude and to prolongation of the pulse width which is caused by thermal generation of trapped charge carriers [13][14][15]. Therefore, most investigators try to reduce the concentration of deep centers in SI GaAs layers, which is 1014--1016cm -3.At the Siberian Physical Technical Institute (Tomsk), 7t-v-n-structures based on GaAs compensated with "deep impurity" (Cr) have been proposed as a detector material. The Cr centers are introduced by means of a diffusion process to form a sensitive layer of -400 lain thickness. The CCE is higher in n-v-n-structures than in analogs based on SI GaAs although the concentration of deep centers Arc, is more than 1017cm -3 [16,17]. Therefore, the aim of this work is to study the collection of non-equilibrium charge carriers and the role of deep centers in the interaction of ~-v-n-structures with ionizing radiation. The f...
The distribution of an electric field and the amplitude spectra obtained experimentally in the presence of ionization losses of charge particles in a detector of ~z-v-n-structures are presented in this" paper. It is shown that trapping of" nonequilibrium holes by negatively charged deep centers keeps the electric field in the track high enough for electron drft with maximum velocity. Due to this, the charge collection efficiency (CCE) reaches 50-60%.One of the most important directions of sensory electronics is the development of detectors capable of registering charged particles and quanta of electromagnetic radiation with high efficiency. The efforts of scientists from different countries are directed to searching for new materials and structures with high detection efficiency. Gallium arsenide is a prospective material for these purposes, which is due to its high radiation hardness, high absorption coefficient of gammaradiation, and wide band gap (Eg = 1.43 eV). The advantages of using p-i-n-structures and Shottky diodes based on semiinsulating (SI) grown GaAs in nuclear physics and high energy physics are presented in [1,2].Since the CCE is an important parameter of a semiconducting detector, many researchers study the mechanism of collection of non-equilibrium charge carriers created by ionizing particles or electromagnetic radiation. It is shown that a drift mechanism of charge collection takes place in detector structures based on SI GaAs. The influence of the electric field distribution in the track on the CCE has been analyzed in [3][4][5][6][7]. It is noted that the width of a region with high electric field exceeds the calculated value of the SCR and the CCE correlates with the thickness of the highly resistive layer, where the strength of the electric field is more than 1 kV/cm. The influence of deep centers, being a concurrent part of SI GaAs, on the value and time distribution of the amplitude of the charge induced was studied in [8][9][10][11][12][13][14][15]. In these works, it is shown that trapping of non-equilibrium charge carriers, created by ionization losses in the track, on the deep centers leads to the decrease of the induced charge amplitude and to prolongation of the pulse width which is caused by thermal generation of trapped charge carriers [13][14][15]. Therefore, most investigators try to reduce the concentration of deep centers in SI GaAs layers, which is 1014--1016cm -3.At the Siberian Physical Technical Institute (Tomsk), 7t-v-n-structures based on GaAs compensated with "deep impurity" (Cr) have been proposed as a detector material. The Cr centers are introduced by means of a diffusion process to form a sensitive layer of -400 lain thickness. The CCE is higher in n-v-n-structures than in analogs based on SI GaAs although the concentration of deep centers Arc, is more than 1017cm -3 [16,17]. Therefore, the aim of this work is to study the collection of non-equilibrium charge carriers and the role of deep centers in the interaction of ~-v-n-structures with ionizing radiation. The f...
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