Infrared Interlayer Exciton Emission in 
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 Heterostructures

Karni, Ouri; Barré, Elyse; Lau, Sze Cheung; Gillen, Roland; Yue, Eric; Kim, Bumho; Watanabe, Kenji; Taniguchi, Takashi; Maultzsch, Janina; Barmak, K.; Page, Ralph H.; Heinz, Tony F.

doi:10.1103/physrevlett.123.247402

Cited by 147 publications

(88 citation statements)

References 63 publications

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“…Ferromagnetic semiconductors such as CrBr 3 and CrI 3 cover similar transition energies 95,96 . Interlayer excitons in heterostructures such as MoS 2 /WSe 2 can reach emission wavelengths above 1,100 nm (<1.1 eV), approaching the telecommunication bands 97 . Black phosphorus is a layered semiconducting material with a direct bandgap 93 .…”

Section: Optical Propertiesmentioning

confidence: 99%

Guide to optical spectroscopy of layered semiconductors

et al. 2020

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Section: Optical Propertiesmentioning

confidence: 99%

Guide to optical spectroscopy of layered semiconductors

et al. 2020

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“…The interlayer exciton energy is lower than the bandgaps of individual 2D materials, and relies on the band alignment at the heterostructure interface, which is electrostatically tunable. [159][160][161][162] Light harvesting and emission devices based on interlayer excitons have attracted attention for infrared applications. However, the interlayer transition rate in 2D heterostructures is typically quite low because the transition is indirect both in real and reciprocal spaces.…”

Section: Discussionmentioning

confidence: 99%

“…Another interesting topic is the inclusion of interlayer excitons in 2D heterostructures. The interlayer exciton energy is lower than the bandgaps of individual 2D materials, and relies on the band alignment at the heterostructure interface, which is electrostatically tunable 159‐162 . Light harvesting and emission devices based on interlayer excitons have attracted attention for infrared applications.…”

Section: Discussionmentioning

confidence: 99%

Enhancing light‐matter interaction in 2D materials by optical micro/nano architectures for high‐performance optoelectronic devices

Tao

Chen

et al. 2020

InfoMat

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Two-dimensional materials are a promising solution for next-generation electronic and optoelectronic devices due to their unique properties. Owing to the atomic thickness of 2D materials, the light-matter interaction length in 2D materials is much shorter than that in bulk materials, which limits the performance of optoelectronic devices composed of 2D materials. To improve the light-matter interactions, optical micro/nano architectures have been introduced into 2D material optoelectronic devices. In this review, we present a concise introduction and discussion of various strategies for the enhancement of lightmatter interaction in 2D materials, namely, the plasmonic effect, waveguide, optical cavity, and reflection architecture. We have outlined the current advances in high-performance 2D material optoelectronic devices (eg, photodetectors, electrooptic modulators, light-emitting diodes, and molecular sensors) assisted by these enhancement strategies. Finally, we have discussed the future challenges and opportunities of micro/nano photonic structure designs in 2D material devices.

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“…For example, it was demonstrated that twisted bilayer graphene can exhibit alternating superconducting and insulating regions [11,12] and that the Moiré excitons were found in vdWs heterostructures [13]. By adjusting the twist angle, the interlayer exciton emission around 1 eV was observed from MoS 2 /WSe 2 heterostructures [14][15][16], paving a promising way to realize ultrafast and low-threshold nanolaser for silicon (Si) photonics and optical communication system [17,18]. Moreover, as a new member of 2D material family, 2D perovskites [19] has also been widely combined with integrated photonic devices, such as solar cells [20,21] and light sources [22,23].…”

Section: Introductionmentioning

confidence: 99%

2D materials integrated with metallic nanostructures: fundamentals and optoelectronic applications

et al. 2020

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Abstract Due to their novel electronic and optical properties, atomically thin layered two-dimensional (2D) materials are becoming promising to realize novel functional optoelectronic devices including photodetectors, modulators, and lasers. However, light–matter interactions in 2D materials are often weak because of the atomic-scale thickness, thus limiting the performances of these devices. Metallic nanostructures supporting surface plasmon polaritons show strong ability to concentrate light within subwavelength region, opening thereby new avenues for strengthening the light–matter interactions and miniaturizing the devices. This review starts to present how to use metallic nanostructures to enhance light–matter interactions in 2D materials, mainly focusing on photoluminescence, Raman scattering, and nonlinearities of 2D materials. In addition, an overview of ultraconfined acoustic-like plasmons in hybrid graphene–metal structures is given, discussing the nonlocal response and quantum mechanical features of the graphene plasmons and metals. Then, the review summarizes the latest development of 2D material–based optoelectronic devices integrated with plasmonic nanostructures. Both off-chip and on-chip devices including modulators and photodetectors are discussed. The potentials of hybrid 2D materials plasmonic optoelectronic devices are finally summarized, giving the future research directions for applications in optical interconnects and optical communications.

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Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures

Cited by 147 publications

References 63 publications

Guide to optical spectroscopy of layered semiconductors

Guide to optical spectroscopy of layered semiconductors

Enhancing light‐matter interaction in 2D materials by optical micro/nano architectures for high‐performance optoelectronic devices

2D materials integrated with metallic nanostructures: fundamentals and optoelectronic applications

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