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Interlayer excitons, electron-hole pairs bound across two monolayer van der Waals semiconductors, offer promising electrical tunability and localizability. Because such excitons display weak electron-hole overlap, most studies have examined only the lowest-energy excitons through photoluminescence. We directly measured the dielectric response of interlayer excitons, which we accessed using their static electric dipole moment. We thereby determined an intrinsic radiative lifetime of 0.40 nanoseconds for the lowest direct-gap interlayer exciton in a tungsten diselenide/molybdenum diselenide heterostructure. We found that differences in electric field and twist angle induced trends in exciton transition strengths and energies, which could be related to wave function overlap, moiré confinement, and atomic reconstruction. Through comparison with photoluminescence spectra, this study identifies a momentum-indirect emission mechanism. Characterization of the absorption is key for applications relying on light-matter interactions.

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We report light emission around 1200 nm from a vertical heterostructure consisting of M0S2 and WSe2 monolayers. The emission, arising from the fundamental interlayer exciton, can be tuned by nearly 100 nm by electrical gating.

We investigate the valley Hall effect (VHE) in monolayer WSe2 field-effect transistors using optical Kerr rotation measurements at 20 K. While studies of the VHE have so far focused on n-doped MoS2, we observe the VHE in WSe2 in both the n- and p-doping regimes. Hole doping enables access to the large spin-splitting of the valence band of this material. The Kerr rotation measurements probe the spatial distribution of the valley carrier imbalance induced by the VHE. Under current flow, we observe distinct spin-valley polarization along the edges of the transistor channel. From analysis of the magnitude of the Kerr rotation, we infer a spin-valley density of 44 spins/μm, integrated over the edge region in the p-doped regime. Assuming a spin diffusion length less than 0.1 μm, this corresponds to a spin-valley polarization of the holes exceeding 1%.

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van der Waals (vdW) heterostructures provide a powerful method to control the alignment of energy bands of atomically thin 2D materials. Under light illumination, the optical responses are dominated by Coulomb-bound electron−hole quasiparticles, for example, excitons, trions, and biexcitons, whose contributions accordingly depend on the types of heterostructures. For type-II heterostructures, it has been well established that light excitation results in electrons and holes that are separated in different layers, and the radiative recombination is dominated by the interlayer excitons. On the contrary, little is known about the corresponding optical responses of type-I cases. Understanding the optical characteristics of type-I heterostructures is important to the full exploration of the quasiparticle physics of the 2D heterostacks. In this study, we performed optical spectroscopy on type-I vdW heterostacks composed of monolayer MoTe 2 and WSe 2 . Photoluminescence and reflection contrast spectroscopy show that the light absorption and emission are dominated by the Coulomb-bound trions. Importantly, we observed that the MoTe 2 trion emission gets stronger compared with the exciton emission under resonant light excitation to the WSe 2 trion absorption state, especially in the WSe 2 /MoTe 2 /WSe 2 heterotrilayer. A detailed study of photoluminescence excitation further reveals that the chargetransfer mechanism is likely responsible for our observation, which differs from the exciton-dominated dipole−dipole energy transfer in type-II structures. Our demonstration implies that the type-I vdW heterostack provides new opportunities to engineer the light− matter interactions through many-body Coulomb-bound states.