2022
DOI: 10.1038/s41565-022-01253-7
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Bidirectional phonon emission in two-dimensional heterostructures triggered by ultrafast charge transfer

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Cited by 23 publications
(24 citation statements)
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“…The upper and lower bounds in G 1 and G 2 are determined by their variations that correspond to a 15% increase in the SSE from its global-minimal value (the global minimum point in SSE is achieved at 5.6 MW·m –2 ·K –1 for G 1 and 9 MW·m –2 ·K –1 for G 2 ). We note that these values are in good alignment with previous reports of the values for G ( h -BN/WS 2 ) and G (WS 2 /SiO 2 ) measured from time-resolved ultrafast electron diffraction or the optothermal Raman technique. Comparisons of the experimental and fitted results are displayed in Figure c (for the short timescale) and Figure d (for the longer timescale) in conjunction with the determined SSE values.…”
Section: Resultssupporting
confidence: 87%
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“…The upper and lower bounds in G 1 and G 2 are determined by their variations that correspond to a 15% increase in the SSE from its global-minimal value (the global minimum point in SSE is achieved at 5.6 MW·m –2 ·K –1 for G 1 and 9 MW·m –2 ·K –1 for G 2 ). We note that these values are in good alignment with previous reports of the values for G ( h -BN/WS 2 ) and G (WS 2 /SiO 2 ) measured from time-resolved ultrafast electron diffraction or the optothermal Raman technique. Comparisons of the experimental and fitted results are displayed in Figure c (for the short timescale) and Figure d (for the longer timescale) in conjunction with the determined SSE values.…”
Section: Resultssupporting
confidence: 87%
“…Furthermore, upgrading the reported spectroscopy setup to a wide-field microscopy configuration may allow for the imaging of interfaces in spatially inhomogeneous 2D heterostructures. The impulsive phonon excitation can also be exploited as a tuning knob of the electronic and optical properties of 2D heterostructures via interfacial electron–phonon interactions. ,, …”
Section: Discussionmentioning
confidence: 99%
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“…[23][24][25][26] Due to the robust type-II band alignment, WSe 2 /WS 2 vdW heterostructure has attracted considerable attention. [27][28][29][30][31][32][33][34][35][36][37][38] In vertical heterostructures, the vdW gap between monolayer components offers space for the intercalation of ions and molecules, thereby giving rise to new opportunities for property modulation. It has been evidenced that ion intercalation into TMD heterostructures has a significant impact on the chemical and physical properties and leads to broad applications in energy storage.…”
Section: Introductionmentioning
confidence: 99%
“…23–26 Due to the robust type-II band alignment, WSe 2 /WS 2 vdW heterostructure has attracted considerable attention. 27–38…”
Section: Introductionmentioning
confidence: 99%