Influences of Intensity of Electric Field on Properties of Poly(vinylidene fluoride–tetrafluoroethylene) Thin Films during Annealing Process

Jeong, Jong‐Hyeon; Terashima, Daiki; Kimura, Chiharu; Aoki, Hidemitsu

doi:10.7567/jjap.50.04dk09

Cited by 5 publications

(1 citation statement)

References 17 publications

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“…On the other hand, organic ferroelectric polar polymers have been explored as an alternative to inorganic ferroelectrics requiring high process temperature, because ferroelectric polymers can be deposited on Si at temperatures as low as 200 °C by the solution process. Since poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene [P(VDF-TrFE)] and tetrafluoroethylene [P(VDF-TeFE)] are well-known ferroelectric polymers, [8][9][10][11][12][13][14] many studies on the MFIS and MFS structures using these organic ferroelectrics have been reported. [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] In the case of Si-based MFS structures with organic ferroelectrics, MFIS structures with an inserted insulator layer such as Ta 2 O 5 , SiON x , or Si 3 N 4 are usually used because it is difficult to obtain smooth thin organic films directly on hydrogen-terminated Si surfaces.…”

Section: Introductionmentioning

confidence: 99%

Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride–trifluoroethylene), as a gate dielectric

Miyata¹,

Yoshimura²,

Ashida³

et al. 2016

Jpn. J. Appl. Phys.

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Si-based metal–ferroelectric–semiconductor (MFS) capacitors have been fabricated using poly(vinylidene fluoride–trifluoroethylene) [P(VDF–TrFE)] as a ferroelectric gate. The pinhole-free P(VDF–TrFE) thin films with high resistivity were able to be prepared by spin-coating directly onto hydrogen-terminated Si. The capacitance–voltage (C–V) characteristics of the ferroelectric gate field effect transistor (FeFET) using this MFS structure clearly show butterfly-shaped hysteresis originating from the ferroelectricity, indicating carrier modulation on the Si surface at gate voltages below 2 V. The drain current–gate voltage (I D–V G) characteristics also show counterclockwise hysteresis at gate voltages below 5 V. This is the first report on the low-voltage operation of a Si-based FeFET using P(VDF–TrFE) as a gate dielectric. This organic gate FeFET without any insulator layer at the ferroelectric/Si interface should be one of the promising devices for overcoming the critical issues of the FeFET, such as depolarization field and a decrease in the gate voltage.

show abstract

Section: Introductionmentioning

confidence: 99%

Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride–trifluoroethylene), as a gate dielectric

Miyata¹,

Yoshimura²,

Ashida³

et al. 2016

Jpn. J. Appl. Phys.

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P(VDF-TeFE)/Organic Semiconductor Structure Ferroelectric-Gate FETs

Kanashima

Okuyama

2016

Topics in Applied Physics

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Review of solution-processed oxide thin-film transistors

Kim

Yoon²,

Kim

2014

Jpn. J. Appl. Phys.

210

169

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In this review, we summarize solution-processed oxide thin-film transistors (TFTs) researches based on our fulfillments. We describe the fundamental studies of precursor composition effects at the beginning in order to figure out the role of each component in oxide semiconductors, and then present low temperature process for the adoption of flexible devices. Moreover, channel engineering for high performance and reliability of solution-processed oxide TFTs and various coating methods: spin-coating, inkjet printing, and gravure printing are also presented. The last topic of this review is an overview of multi-functional solution-processed oxide TFTs for various applications such as photodetector, biosensor, and memory.

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Influences of Intensity of Electric Field on Properties of Poly(vinylidene fluoride–tetrafluoroethylene) Thin Films during Annealing Process

Cited by 5 publications

References 17 publications

Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride–trifluoroethylene), as a gate dielectric

Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride–trifluoroethylene), as a gate dielectric

P(VDF-TeFE)/Organic Semiconductor Structure Ferroelectric-Gate FETs

Review of solution-processed oxide thin-film transistors

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