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The impact of controlling Ga-oxide (GaO
x
) interlayers in SiO2/GaO
x
/GaN gate stacks is investigated by means of physical and electrical characterizations. Direct deposition of SiO2 insulators produces thin GaO
x
interlayers, and subsequent oxidation treatment attains high-quality insulator/GaN interface. However, the Ga diffusion into the SiO2 layers severely degrades the breakdown characteristics of GaN-MOS devices. To improve reliability of such devices, we proposed a two-step procedure with the initial SiO2 deposition conducted under nitrogen-rich ambient, followed by thick SiO2 capping. We found that this two-step procedure enables nitrogen incorporation in the insulator/GaN interface to stabilize GaN surface. Consequently, the Ga diffusion into the SiO2 overlayer during the oxidation annealing is effectively suppressed. The proposed method allows us to achieve a SiO2/GaO
x
/GaN stacked structure of superior electrical property with improved Weibull distribution of an oxide breakdown field and with interface state density below 1010 cm−2 eV−1.
Stacked gate dielectrics consisting of wide bandgap SiO2 insulators and thin aluminum oxynitride (AlON) interlayers were systematically investigated in order to improve the performance and reliability of AlGaN/GaN metal–oxide–semiconductor (MOS) devices. A significantly reduced gate leakage current compared with that in a single AlON layer was achieved with these structures, while maintaining the superior thermal stability and electrical properties of the oxynitride/AlGaN interface. Consequently, distinct advantages in terms of the reliability of the gate dielectrics, such as an improved immunity against electron injection and an increased dielectric breakdown field, were demonstrated for AlGaN/GaN MOS capacitors with optimized stacked structures having a 3.3-nm-thick AlON interlayer.
Similarities and differences in the design of the interfaces between gate dielectrics and GaN-based semiconductors were systematically investigated with a focus on the thermal stability of the interlayers. Although the excellent electrical properties of a SiO2/GaN interface with a thin Ga-oxide interlayer (SiO2/GaO
x
/GaN) were deteriorated by high-temperature treatment at around 1000 °C, the thin oxide on the AlGaN surface (SiO2/GaO
x
/AlGaN) exhibited superior thermal stability and interface quality even after treatment at 1000 °C. Physical characterizations showed that thermal decomposition of the thin GaO
x
layer on the GaN surface is promoted by oxygen transfer, which produces volatile products, leading to remarkable roughening of the GaN surface. In contrast, decomposition of the thin GaO
x
layer was suppressed on the AlGaN surface under the high temperatures, preserving a smooth oxide surface. The mechanisms behind both the improved and degraded electrical properties in these GaN-based MOS structures are discussed on the basis of these findings.
We investigated the fabrication and electrical and optical properties of top-gate-type polymer light-emitting transistors with the surfaces of amorphous fluoropolymer insulators, CYTOP (Asahi Glass) modified by vacuum ultraviolet light (VUV) treatment. The surface energy of CYTOP, which has a good solution barrier property was increased by VUV irradiation, and the gate electrode was fabricated by solution processing on the CYTOP film using the Ag nano-ink. The influence of VUV irradiation on the optical properties of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) films with various gate insulators was investigated to clarify the passivation effect of gate insulators. It was found that the poly(methyl methacrylate) (PMMA) film prevented the degradation of the F8BT layer under VUV irradiation because the PMMA film can absorb VUV. The solution-processed F8BT device with multilayer PMMA/CYTOP insulators utilizing a gate electrode fabricated using the Ag nano-ink exhibited both the ambipolar characteristics and yellow-green emission.
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