Influence of transistor parameters on the noise margin of organic digital circuits

Abstract

The concept of noise margin is crucial in the design and operation of digital logic circuits. Analytical expressions for the transfer curves of an inverter based on two depletion-mode p-type organic thin-film transistors (OTFTs) were calculated. Based on these expressions, the values for the noise margin of organic-based inverters were calculated. In this paper, the influence of the OTFT parameters on the noise margin is presented. Knowing that statistical variations of the transistor parameters are inherent to OTFT technology, these statistical variations are also taken into account. Finally, a circuit yield analysis is presented.

Increasing the noise margin in organic circuits using dual gate field-effect transistors

“…If we neglect hard faults, to ensure robust circuit functionality and, hence, effective yield, the noise margin of each gate must be above a certain minimum value. 4,5 The threshold voltage has a very strong influence on the noise margin of an organic inverter. 4 For a given gate oxidesemiconductor system, the threshold voltage is normally fixed.…”

“…4,5 The threshold voltage has a very strong influence on the noise margin of an organic inverter. 4 For a given gate oxidesemiconductor system, the threshold voltage is normally fixed. To independently tune the threshold voltage, we apply a second gate.…”

Simple Noise Margin Model for Optimal Design of Unipolar Thin-Film Transistor Logic Circuits

“…However, for TFT technologies in amorphous silicon, organic and metal oxide semiconductors, it is difficult to find n-type/p-type semiconductor materials with the equivalent performance and compatible processes to build high performance complementary logic circuits. Consequently, various unipolar logic designs have been studied for implementation of TFT circuits, including diode-load [7], zero-V GS -load [8], dual-V th and pseudo-CMOS [9], which are based on p-type TFTs. Among them, the zero-V GS -load logic has been popularly used for its circuit simplicity, and relatively high noise margin (NM).…”

Poly(4-vinylphenol) gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors

“…Several research groups recently published alternative routes to decrease the cross-linking temperature. [13][14][15][16][17] The short curing time and low thermal budget requirement is still an important issue for the PVP film cross-linking process.…”