Increasing the noise margin in organic circuits using dual gate field-effect transistors

Spijkman, Mark-Jan; Smits, Ecp Edsger; Blom, Pwm Paul; Leeuw, DM Dago de; Come, Y Bon Saint; Setayesh, Sepas; Cantatore, Eugenio

doi:10.1063/1.2904624

Cited by 68 publications

(47 citation statements)

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“…When the input voltage is low (V in ) V dd ), the driver transistor is turned on and the output voltage is pulled up from logic 1 to logic 0. 24,25 When the input voltage is high (V in ) 0), the output voltage is pulled down to V dd because the load transistor is chosen much wider than the driver. Figure 3b shows the output signal of the inverter as a function of the input voltage (V in ).…”

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Ordered Semiconducting Self-Assembled Monolayers on Polymeric Surfaces Utilized in Organic Integrated Circuits

et al. 2010

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We report on a two-dimensional highly ordered self-assembled monolayer (SAM) directly grown on a bare polymer surface. Semiconducting SAMs are utilized in field-effect transistors and combined into integrated circuits as 4-bit code generators. The driving force to form highly ordered SAMs is packing of the liquid crystalline molecules caused by the interactions between the linear alkane moieties and the π-π stacking of the conjugated thiophene units. The fully functional circuits demonstrate long-range order over large areas, which can be regarded as the start of flexible monolayer electronics.

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Ordered Semiconducting Self-Assembled Monolayers on Polymeric Surfaces Utilized in Organic Integrated Circuits

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“…The noise margin can dramatically be improved by using dual-gate transistors to set the threshold voltage. 4 The layout of a dual-gate transistor contains an additional gate dielectric and electrode. 5,6 The second gate electrode modifies the charge carrier distribution in the channel accumulated by the first gate.…”

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Charge transport in dual-gate organic field-effect transistors

Brondijk

Spijkman

Torricelli

et al. 2012

Applied Physics Letters

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Related ArticlesAnalytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 112, 084512 (2012) Oxygen plasma post process to obtain consistent conductance of carbon nanotubes in carbon nanotube fieldeffect transistors Appl. Phys. Lett. 101, 173104 (2012) Impact of universal mobility law on polycrystalline organic thin-film transistors J. Appl. Phys. 112, 084503 (2012) Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxidesemiconductor field-effect transistors J. Appl. Phys. 112, 084501 (2012) Photoresponsivity enhancement of pentacene organic phototransistors by introducing C60 buffer layer under source/drain electrodes Appl.

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“…This "top" gate has the property to influence the transistor threshold, inducing a capacitive division of the bias voltage applied to the bottom gate (V G ) [12]. The effect of the top gate (inset of Fig.…”

Section: Dual Gate Organic Tfts and Their Modelmentioning

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A tunable transconductor for analog amplification and filtering based on double-gate organic TFTs

Raiteri

Torricelli

Cantatore

et al. 2011

2011 Proceedings of the ESSCIRC (ESSCIRC)

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Increasing the noise margin in organic circuits using dual gate field-effect transistors

Abstract: Increasing the noise margin in organic circuits using dual gate field-effect transistors Spijkman, M.; Smits, E. C. P.; Blom, P. W. M.; de Leeuw, D. M.; Saint Come, Y. Bon; Setayesh, S.; Cantatore, E.; Bon Saint Côme, Y.

Cited by 68 publications

References 12 publications

Ordered Semiconducting Self-Assembled Monolayers on Polymeric Surfaces Utilized in Organic Integrated Circuits

Ordered Semiconducting Self-Assembled Monolayers on Polymeric Surfaces Utilized in Organic Integrated Circuits

Charge transport in dual-gate organic field-effect transistors

A tunable transconductor for analog amplification and filtering based on double-gate organic TFTs

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