Poly(4-vinylphenol) gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors

Fan, Chih‐Peng; Shang, Ming-Chi; Hsia, Mao-Yuan; Wang, Shea–Jue; Huang, Bohr–Ran; Lee, Win–Der

doi:10.1063/1.4944748

Cited by 16 publications

(10 citation statements)

References 21 publications

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“…Because of that, the hydrophilic surface of PVA results in poor surface conditions, which inhibits the growth of the pentacene grain. It has been reported [27] that the hydrophilic condition can be represented by the measured contact angle of the surface. The contact angle of the samples with a single PVA, single PVP, and bilayer high-K PVA/low-K PVP, respectively, were measured using the sessile drop method, as shown in Figure 6.…”

Section: Resultsmentioning

confidence: 99%

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

et al. 2021

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In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which was higher than that of the single PVP layer. It resulted in an increase in the gate capacitance and an increased drain current. The surface morphology of the bilayer gate dielectric could be suitable for pentacene grain growth because the PVP layer was deposited above the organic PVA surface, thereby replacing the inorganic surface of the ITO gate electrode. The device performances were significantly improved by using the bilayer gate dielectric based upon the high-K characteristics of the PVA layer and the enlargement of the pentacene grain. Notably, the field-effect mobility was increased from 0.16 to 1.12 cm2/(Vs), 7 times higher than that of the control sample.

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Section: Resultsmentioning

confidence: 99%

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

et al. 2021

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“…Klauk et al [29] reported better electrical properties using PVP gate dielectric layers than SiO 2 gate dielectric layers [67]. However, PVP is not stable at ambient conditions owing to its poor resistance to humidity, thus it requires stabilizers such as poly(melamine-coformaldehyde) methylated (PMF), working as a cross-linking agent, in propylene-glycol-monomethyl-ether-acetate (PGMEA) [68].…”

Section: Non-metallic Inksmentioning

confidence: 99%

Printed Electronics as Prepared by Inkjet Printing

2020

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Inkjet printing has been used to produce a range of printed electronic devices, such as solar panels, sensors, and transistors. This article discusses inkjet printing and its employment in the field of printed electronics. First, printing as a field is introduced before focusing on inkjet printing. The materials that can be employed as inks are then introduced, leading to an overview of wetting, which explains the influences that determine print morphology. The article considers how the printing parameters can affect device performance and how one can account for these influences. The article concludes with a discussion on adhesion. The aim is to illustrate that the factors chosen in the fabrication process, such as dot spacing and sintering conditions, will influence the performance of the device.

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“…Dielectric materials with their energy storing capacity have a plethora of applications particularly in designing capacitors, transformers, resonators, transistors, photovoltaic devices, integrated circuits (ICs), and so on. , With the emerging advancements and innovations in the semiconductor industry, the synthesis of novel dielectric materials has become a topic of great interest, particularly with regard to their use in designing multilevel nanoscale flexible electronic technology. , Because of the shrinkage in the size of electronic components, the efficiency of traditional dielectric materials is a serious concern. Traditional materials such as SiO 2 , AlO 2 , and other inorganic metal oxide materials have reached their functional limits. , Hence, low dielectric behavior has been reported for mesoporous silica composites, − fluorine-containing carbon materials, porous polybenzoxazole-based films, − poly( p -xylylene) polymers, and organometallic compounds, while methacrylate polymers, styrenes, poly(4-vinylphenol) (PVP), poly(vinylidene fluoride) (PVDF), and POSS polymers have been used as high dielectric gate polymeric materials. , However, these organic dielectric materials possess some series issues regarding their thermal stability, mechanical strength, compatibility with other inorganic components of devices, and the fact that they degrade over time. , Very recently, hybrid inorganic–organic dielectric materials have emerged as an alternative to organic as well inorganic dielectrics with unique features of having both organic and inorganic molecules within a single material. − …”

Section: Introductionmentioning

confidence: 99%

“…5,6 Hence, low dielectric behavior has been reported for mesoporous silica composites, 7−9 fluorine-containing carbon materials, 10 porous polybenzoxazole-based films, 11−13 poly(pxylylene) polymers, and organometallic compounds, 14 while methacrylate polymers, styrenes, poly(4-vinylphenol) (PVP), poly(vinylidene fluoride) (PVDF), and POSS polymers have been used as high dielectric gate polymeric materials. 15,16 However, these organic dielectric materials possess some series issues regarding their thermal stability, mechanical strength, compatibility with other inorganic components of devices, and the fact that they degrade over time. 17,18 Very recently, hybrid inorganic−organic dielectric materials have emerged as an alternative to organic as well inorganic dielectrics with unique features of having both organic and inorganic molecules within a single material.…”

Section: ■ Introductionmentioning

confidence: 99%

Polar Molecule Confinement Effects on Dielectric Modulations of Sr-Based Metal–Organic Frameworks

Usman

Feng

Chiou

et al. 2019

ACS Appl. Electron. Mater.

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The dielectric behavior of metal–organic frameworks is highly dependent on the polarity of molecules that are confined in their structure. Hence, it is of fundamental importance to examine the influence of polar molecules in a well-designed framework. Herein, we clearly distinguish the role of polar molecular confinement on dielectric modulations in three isostructural Sr-based MOFs [Sr2(1,3-bdc)2(H2O)(DMF)] n (1D), [Sr2(1,3-bdc)2(H2O)2·H2O] n (1W), and their dehydrated analogue [Sr2(1,3-bdc)2] n (1). The synthesis of Sr-based MOF [Sr2(1,3-bdc)2(H2O)(DMF)] n (1D) was performed by the solvothermal reaction of SrCl2·6H2O and benzene-1,3-dicarboxylic acid (1,3-bdc) at 110 °C. The effective dielectric constant (κeff) of the DMF-containing compound 1D was found to be 22.4 (κ = 39.3, where κ is the intrinsic dielectric constant) at 1 MHz (295 K) which serves to highlight the significant function of the coordinated DMF when compared with its isostructural MOF having coordinated and guest H2O molecules (1W; κeff = 7.9, κ = 13.0) and the dehydrated analogue (1; κeff = 2.4, κ = 3.2). The presence of DMF molecules between the 2D layers of compound 1D instead of H2O molecules or a vacuum resulted in a high dielectric constant due to the large kinetic diameter and dipole moment of DMF molecules. The significance of this study is the design of an elegant model with a stable core structure, which can be used to clearly distinguish the role of polar molecules as well as the presence and absence of guest molecules on the dielectric behavior of electronic materials. This is of fundamental significance in chemistry, which will pave the way for the design of dielectric MOFs in the future for the microelectronics applications.

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Poly(4-vinylphenol) gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors

Cited by 16 publications

References 21 publications

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

Printed Electronics as Prepared by Inkjet Printing

Polar Molecule Confinement Effects on Dielectric Modulations of Sr-Based Metal–Organic Frameworks

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