Influence of thermal treatments on the electronic activity of dislocations in GaAs observed by cathodoluminescence

Djemel, A.; Castaing, J.; Visentin, N.; Bonnet, Muriel

doi:10.1088/0268-1242/5/12/013

Cited by 8 publications

(5 citation statements)

References 8 publications

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“…The defects introduce a stress field which itself modifies the gap [13]. Similarly, extended defects which have been introduced by high temperature plastic deformation reduce the CL intensity [14,15].…”

Section: Resultsmentioning

confidence: 99%

Study of surface defects in GaAs by cathodoluminescence: calculation and experiment

Djemel

Nouiri

Tarento

2000

J. Phys.: Condens. Matter

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In this work, we propose a model for self-consistent calculation of the cathodoluminescence intensity, which has been used to study surface defects in GaAs materials. In this model, we have taken into account the influence of surface defects on the electron beam parameters (energy Eo, intensity Ip) and the depletion region (Zd). Without introducting the concept of a `dead layer', we have calculated the dependence of the CL intensity on the surface parameters (defect density Nt and energy level associated Et). By comparison of the experimental results with the theoretical curves, some surface parameters have been derived.

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Section: Resultsmentioning

confidence: 99%

Study of surface defects in GaAs by cathodoluminescence: calculation and experiment

Djemel

Nouiri

Tarento

2000

J. Phys.: Condens. Matter

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“…Several studies have attributed the recombination activity at dislocations in compound semiconductors in some part to an atmosphere of impurities and point defects. [37][38][39][40][41][42] The maximum electron beam induced current (EBIC) contrast due to recombination at intrinsic states in a dislocation in GaAs has been calculated to be ~0.07, with the greater values measured experimentally attributed to extrinsic states introduced by impurities. 43 Similar results were seen in EBIC analysis of dislocations in silicon 39 and CL analysis of dislocations in GaN.…”

Section: Discussionmentioning

confidence: 99%

Recombination activity of threading dislocations in GaInP influenced by growth temperature

Mukherjee

Reilly

Callahan

et al. 2018

Journal of Applied Physics

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Room-temperature non-radiative recombination is studied at single dislocations in Ga0.5In0.5P quantum wells grown on metamorphic templates using cathodoluminescence and electron channeling contrast imaging. An analysis of the light emission intensity profiles around single dislocations reveals that the average recombination strength of a dislocation decreases by a factor of four and seven as a result of decreasing the growth temperature of the GaInP quantum well from 725 to 675 and 625 °C respectively. This reduction occurs despite little change in the diffusion length, precluding the prospect of inducing carrier localization by ordering and phase separation in GaInP at lower growth temperatures. These observations are rationalized by the premise that point defects or impurities are largely responsible for the recombination activity of dislocations, and the extent of decoration of the dislocation core decreases with temperature. Preliminary evidence for the impact of the Burgers vector is also presented. The lowest growth temperature, however, negatively impacts light emission away from dislocations. Carrier recombination in the bulk and at dislocations need to be considered together for metamorphic devices, and this work can lead to new techniques to limit non-radiative recombination.2

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“…Importantly, we do not see a change in CL spot contrast during glide indicating that non-radiative recombination at TDs in these heterostructures is most likely intrinsic to the dislocation core as opposed to arising from an atmosphere of impurities. [32][33][34] Figs. 2(a) and 2(b) show panchromatic CL emission intensity maps at the start and end, respectively, of a ≈2800 frame scan, taken at one frame per second using a 3 nA sample absorbed current (also in supplementary video).…”

Section: A Redg In Algaas Heterostructures On Simentioning

confidence: 99%

Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering

Hughes

Shah

Mukherjee

2019

Journal of Applied Physics

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III-V optoelectronics grown epitaxially on Si substrates have large networks of dislocations due to a lattice constant mismatch between the device layers and the substrate. Recombination-enhanced dislocation glide (REDG) allows these dislocations to move and increase in length during device operation, which degrades performance. In this paper, we study REDG dynamics of threading dislocations in situ in (In)AlGaAs double heterostructures grown on Si substrates using scanning electron microscopy cathodoluminescence. The driving force for REDG arises due to coefficient of thermal expansion differences between Si and the III-V layers leading to large residual strains in the films. Tracking of threading dislocations as moving dark spot defects reveals glide characteristics that vary based on the nature of the dislocation. Remarkably, the alloying of a few atom percent of indium using metamorphic structures arrests threading dislocation glide by more than two orders of magnitude. Finally, we present REDG-based filtering as a pathway to reducing the threading dislocation density in select areas, removing a large fraction of the mobile dislocations. Together, these techniques will enable the understanding of dislocation-dislocation and carrier-dislocation interactions that have so far remained elusive during device operation, leading to reliable III-V integrated optoelectronics on silicon.

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Influence of thermal treatments on the electronic activity of dislocations in GaAs observed by cathodoluminescence

Cited by 8 publications

References 8 publications

Study of surface defects in GaAs by cathodoluminescence: calculation and experiment

Study of surface defects in GaAs by cathodoluminescence: calculation and experiment

Recombination activity of threading dislocations in GaInP influenced by growth temperature

Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering

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