Study of surface defects in GaAs by cathodoluminescence: calculation and experiment

Abstract

In this work, we propose a model for self-consistent calculation of the cathodoluminescence intensity, which has been used to study surface defects in GaAs materials. In this model, we have taken into account the influence of surface defects on the electron beam parameters (energy Eo, intensity Ip) and the depletion region (Zd). Without introducting the concept of a `dead layer', we have calculated the dependence of the CL intensity on the surface parameters (defect density Nt and energy level associated Et). By comparison of the experimental results with the theoretical curves, some surface parameters have been derived.

Cathodoluminescence of Self-assembled Nanosystems

“…It has been shown [46,47] that, in practice, the surface recombination can be obtained as a function of the surface charge, and that in regions deeper than z d , the presence of the upper depletion zone can be accounted for by a modification of the actual surface recombination velocity. It has been shown [46,47] that, in practice, the surface recombination can be obtained as a function of the surface charge, and that in regions deeper than z d , the presence of the upper depletion zone can be accounted for by a modification of the actual surface recombination velocity.…”

Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison

“…The influence of surface parameters (N t , E t ) and bulk parameters (L, a, N a ) on the CL signal for p-GaAs has been studied previously [5,[9][10][11]. The present paper deals with the case of n-GaAs, particularly the comparison between the numerical results of the model and experimental data obtained from the literature.…”

Theoretical and Experiment Study of Cathodoluminescence of GaN

“…In the last years, the CL scanning electron microscopy (SEM) has been recognised as one of the important tools used in research and development of novel materials and optoelectronic devices [1][2][3][4][5][6][7][8][9][10][11]. It is particularly used to provide valuable information on the luminescence properties such as composition, optical quality and doping levels of GaAs, GaN and related films [3].…”

“…Barjon et al [7] and Zarem [8] have used the CL measurements to determine the carrier diffusion length in GaAs/AlGaAs and GaN/AlGaN quantum wells. In literature, many cathodoluminescence theories have been proposed to simulate the CL phenomena [9][10][11][12]. Djem intensity of GaAs.…”

“…In literature, many cathodoluminescence theories have been proposed to simulate the CL phenomena [9][10][11][12]. Knobloch et al [12] have the inf al et al [11] have interested to study the effect of surface defects on the CL proposed a simplest model to investigate luence of internal absorption on the CL emission of GaN as a function of electron beam energy. Knobloch et al [12] have the inf al et al [11] have interested to study the effect of surface defects on the CL proposed a simplest model to investigate luence of internal absorption on the CL emission of GaN as a function of electron beam energy.…”