Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison

Djemel, A.; Nouiri, A.; Kouissa, S.; Tarento, R. J.

doi:10.1002/1521-396x(200205)191:1<223::aid-pssa223>3.0.co;2-6

Cited by 13 publications

(8 citation statements)

References 13 publications

(35 reference statements)

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“…The light emission process of CL upon electron bombardment of solids (so-called cathode rays) [25] differs from the classical photo-excitation process of photoluminescence (PL) [26]. It is generally admitted that the CL signal in semiconductors is proportional to the volume density of excess minority carriers [9,10,12]. Alternatively, excitation of CL spectra in oxides originate from the secondary electrons (and holes) generated by elastic and inelastic collisions induced by electron irradiation [15].…”

Section: Iv) Discussionmentioning

confidence: 99%

“…Therefore, we can neglect the ambipolar diffusion of excess carriers unlike for semiconductors [10][11][12]. Moreover, the drift in the internal electric field [32] is not taken into account, as a first approximation.…”

Section: Iv) Discussionmentioning

confidence: 99%

“…Usually, such CL spectra are recorded for low energy electrons (≤ 40 keV) to study native defects and impurities in insulators [4][5][6][7] or semiconductors [8][9][10][11][12][13] in a scanning electron microscope (SEM).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Cathodoluminescence of cerium dioxide: Combined effects of the electron beam energy and sample temperature

Costantini

Seo

Yasuda

et al. 2020

Journal of Luminescence

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Section: Iv) Discussionmentioning

confidence: 99%

Section: Iv) Discussionmentioning

confidence: 99%

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Cathodoluminescence of cerium dioxide: Combined effects of the electron beam energy and sample temperature

Costantini

Seo

Yasuda

et al. 2020

Journal of Luminescence

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“…Reducing the thickness of the defect layer also increases the CL intensity. (Nouiri et al ., 2000, 2007; Djemel et al , 2002).…”

Section: Discussionmentioning

confidence: 99%

FIB-SEM cathodoluminescence tomography: practical and theoretical considerations

Winter

Lebbink

Vries

et al. 2011

Journal of Microscopy

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Focused ion beam-scanning electron microscope (FIB-SEM) tomography is a powerful application in obtaining three-dimensional (3D) information. The FIB creates a cross section and subsequently removes thin slices. The SEM takes images using secondary or backscattered electrons, or maps every slice using X-rays and/or electron backscatter diffraction patterns. The objective of this study is to assess the possibilities of combining FIB-SEM tomography with cathodoluminescence (CL) imaging. The intensity of CL emission is related to variations in defect or impurity concentrations. A potential problem with FIB-SEM CL tomography is that ion milling may change the defect state of the material and the CL emission. In addition the conventional tilted sample geometry used in FIB-SEM tomography is not compatible with conventional CL detectors. Here we examine the influence of the FIB on CL emission in natural diamond and the feasibility of FIB-SEM CL tomography. A systematic investigation establishes that the ion beam influences CL emission of diamond, with a dependency on both the ion beam and electron beam acceleration voltage. CL emission in natural diamond is enhanced particularly at low ion beam and electron beam voltages. This enhancement of the CL emission can be partly explained by an increase in surface defects induced by ion milling. CL emission enhancement could be used to improve the CL image quality. To conduct FIB-SEM CL tomography, a recently developed novel specimen geometry is adopted to enable sequential ion milling and CL imaging on an untilted sample. We show that CL imaging can be manually combined with FIB-SEM tomography with a modified protocol for 3D microstructure reconstruction. In principle, automated FIB-SEM CL tomography should be feasible, provided that dedicated CL detectors are developed that allow subsequent milling and CL imaging without manual intervention, as the current CL detector needs to be manually retracted before a slice can be milled. Due to the required high electron beam acceleration voltage for CL emission, the resolution for FIB-SEM CL tomography is currently limited to several hundreds of nm in XY and up to 650 nm in Z for diamonds. Opaque materials are likely to have an improved Z resolution, as CL emission generated deeper in the material is not able to escape from it.

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“…We believe that the mentioned defects act as nonradiative recombination centers and locally decrease luminescence efficiency. Evaluating the total luminescence efficiency is challenging due to the nontrivial radiation patterns 33 and complex charge carriers dynamics including surface effects 34 in NSPDs. Solving these remains outside of the scope of this article.…”

Section: Resultsmentioning

confidence: 99%

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Güniat

Tappy

Balgarkashi

et al. 2022

ACS Appl. Nano Mater.

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III–V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si technology with III–V semiconductors by integration on Si(100) remains a challenge still today. Vertical nanospades (NSPDs) are quasi-bi-crystal III–V nanostructures that grow on Si(100). Here, we showcase the potential of these structures in optoelectronics application by demonstrating InGaAs heterostructures on GaAs NSPDs that exhibit bright emission in the near-infrared region. Using cathodoluminescence hyperspectral imaging, we are able to study light emission properties at a few nanometers of spatial resolution, well below the optical diffraction limit. We observe a symmetric spatial luminescence splitting throughout the NSPD. We correlate this characteristic to the structure’s crystal nature, thus opening new perspectives for dual wavelength light-emitting diode structures. This work paves the path for integrating optically active III–V structures on the Si(100) platform.

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Cathodoluminescence Calculation of n-GaAs. Surface Analysis and Comparison

Cited by 13 publications

References 13 publications

Cathodoluminescence of cerium dioxide: Combined effects of the electron beam energy and sample temperature

Cathodoluminescence of cerium dioxide: Combined effects of the electron beam energy and sample temperature

FIB-SEM cathodoluminescence tomography: practical and theoretical considerations

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

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